Semiconductor optical amplifier
View Patent ↗The invention relates to a semiconductor optical amplifier including a buried guide active structure ( 12 ), characterized in that the guide active structure ( 12 ) is subjected to an external stress to render the gain of said amplifier insensitive to the polarization of the light to be amplified, said external stress coming from a force induced by a deposit of a material ( 50 ) against a ridge ( 15 ) surrounding said guide active structure ( 12 ).
1. A semiconductor optical amplifier comprising:
a buried guide active structure ( 12 );
a material ( 50 ); and
a ridge; wherein the buried guide active structure is characterized in that the guide active structure ( 12 ) is subjected to an external stress to render the gain of said amplifier insensitive to the polarization of the light to be amplified, said external stress coming from a force induced by a deposit of the material ( 50 ) against the ridge ( 15 ) surrounding said guide active structure ( 12 ).
2. The optical amplifier according to claim 1 , wherein the ridge ( 15 ) surrounding the guide active structure ( 12 ) has a depth from 1 μm to 4 μm.
3. The optical amplifier according to claim 1 , wherein the ridge ( 15 ) surrounding the guide active structure ( 12 ) has a width from 4 μm to 6 μm.
4. The optical amplifier according to claim 1 , wherein the material ( 50 ) deposited against the ridge ( 15 ) surrounding the active structure ( 12 ) is an oxide.
5. The optical amplifier according to claim 1 , wherein the material ( 50 ) deposited is SiO 2 for an external compression stress.
6. The optical amplifier according to claim 1 , wherein the material ( 50 ) deposited is Si 3 N 4 for an external tension stress.
7. The optical amplifier according to claim 1 , wherein the thickness of the material ( 50 ) deposited against the ridge ( 15 ) surrounding the active structure ( 12 ) is from 0.1 μm to 0.5 μm.
8. The optical amplifier according claim 1 , wherein the guide active structure ( 12 ) is subjected to an internal stress due to a lattice mismatch of the semiconductor material, the external stress being a stress additional to this internal stress.
9. A method of manufacturing a semiconductor optical amplifier, comprising:
producing a semiconductor optical amplifier with a buried guide active structure ( 12 );
etching a ridge ( 15 ) surrounding said guide active structure ( 12 ); and
depositing an oxide ( 50 ) on the contours of the etched ridge ( 15 ), and forming an electrode ( 22 ); wherein the buried guide active structure is characterized in that the guide active structure ( 12 ) is subjected to an external stress to render the gain of said semiconductor optical amplifier insensitive to the polarization of the light to be amplified, said external stress coming from a force induced by a deposit of the material ( 50 ) against the ridge ( 15 ) surrounding said guide active structure ( 12 ).
10. The method of claim 9 , wherein the ridge ( 15 ) surrounding the guide active structure ( 12 ) has a depth from 1 μm to 4 μm.
11. The method of claim 9 , wherein the ridge ( 15 ) surrounding the guide active structure ( 12 ) has a width from 4 μm to 6 μm.
12. The method of claim 9 , wherein the material ( 50 ) deposited against the ridge ( 15 ) surrounding the active structure ( 12 ) is an oxide.
13. The method of claim 9 , wherein the material ( 50 ) deposited is SiO 2 for an external compression stress.
14. The method of claim 9 , wherein the material ( 50 ) deposited is Si 3 N 4 for an external tension stress.
15. The method of claim 9 , wherein the thickness of the material ( 50 ) deposited against the ridge ( 15 ) surrounding the active structure ( 12 ) is from 0.1 μm to 0.5 μm.
16. The method of claim 9 , wherein the guide active structure ( 12 ) is subjected to an internal stress due to a lattice mismatch of the semiconductor material, the external stress being a stress additional to this internal stress.