Titanium dioxide cobalt magnetic film and its manufacturing method
View Patent ↗A mixture of TiO 2 and Co is placed in a vacuum chamber under selected oxygen pressure and irradiated in the vacuum chamber with a selected laser light to cause TiO 2 and Co to evaporate from the target and a layer of TiO 2 -Co to epitaxially grow on a heated single crystal substrate. The titanium dioxide-cobalt magnetic film for use in a photocatalyst, a semiconductor material having optical, electrical and magnetic functions, and a transparent magnet. The film is expressed by Ti 1-x Co x O 2 where 0<x≦0.3, and wherein a Ti atom at its lattice position is replaced with a Co atom. The film has anatase or rutile crystalline structure, has its band gap energy varying in a range between 3.13 eV and 3.33 eV, retains its magnetization even at a temperature higher than a room temperature, and is transparent to visible light.
1. A titanium dioxide-cobalt magnetic film having a composition expressed by chemical formula: Ti 1-x Co 2 O 2 where 0<x≦0.3, wherein a Ti atom at its lattice position is replace with a Co atom, and said magnetic film epitaxially grown on a single crystal substrate.
2. A titanium dioxide-cobalt magnetic film as set forth in claim 1 , characterized in that said magnetic film has its crystalline structure that is anatase structure.
3. A titanium dioxide-cobalt magnetic film as set forth in claim 1 , characterized in that said magnetic film has its crystalline structure that is rutile structure.
4. A titanium dioxide-cobalt magnetic film as set forth in claim 1 or 2 , characterized in that said magnetic film has its band gap energy varying in a range between 3.13 eV and 3.33 eV according to the concentration of Co atoms replaced for Ti atoms at their lattice positions.
5. A titanium dioxide-cobalt magnetic film as set forth in any one of claims 1 to 3 , characterized in that said magnetic film is capable of retaining its magnetization even at a temperature higher than a room temperature, and is also transparent to a visible light.
6. A titanium dioxide-cobalt magnetic film as set forth in claim 1 or 2 , characterized in that said single crystal substrate is a LaAlO 3 (001) substrate.
7. A titanium dioxide-cobalt magnetic film as set forth in claim 1 or 3 , characterized in that said single crystal substrate is an Al 2 O 3 substrate.
8. A titanium dioxide-cobalt magnetic film as set forth in claim 1 or 3 , characterized structure.
9. A method of making a titanium dioxide-cobalt magnetic film, characterized in that it comprises the steps of:
preparing a target having TiO 2 and Co mixed together at a selected mixing ratio, and placing a single crystal substrate and said target in a vacuum chamber provided with an atmosphere with a selected oxygen pressure therein; and
in said vacuum chamber, heating said substrate to a selected substrate temperature and irradiating said target with a selected laser light under selected irradiating conditions to cause said TiO 2 and Co to evaporate from said target and a film of TiO 2 -Co to epitaxially grow on said heated single crystal substrate;
wherein said film is expressed by: Ti 1-x Co x O 2 where 0<x≦0.3 and wherein a Ti atom at its lattice position is replaced with a Co atom.
10. A method of making a titanium dioxide-cobalt magnetic film, as set forth in claim 9 , characterized is that said selected oxygen pressure ranges between 10 −5 and 10 −6 Torr, said selected substrate temperature ranges between 500 and 700° C., said selected laser light is a KrF-excimer laser fight applied in the form of a succession of laser pulses, and said selected irradiating conditions include a per pulse power density of said laser light ranging from 1 to 2 joules/cm 3 and a rate of irradiation with the laser pulses ranging between 1 and 10 Hz.
11. A method of making a titanium dioxide-cobalt magnetic film, as set forth in claim 10 , characterized in that it further comprises preparing a second target composed exclusively of TiO 2 and placing said second target in said vacuum chamber, and irradiating the first mentioned target and said second target alternately with laser pulses of said selected laser light at a selected ratio in number corresponding to a selected concentration of Co in TiO 2 -Co composing said film, thereby permitting a film of TiO 2 -Co with said selected Co concentration to grow on said heated single crystal substrate.
12. A titanium dioxide-cobalt magnetic film made by a method of making a titanium dioxide-cobalt magnetic film, as set forth in claim 10 .
13. A photocatalyst using a titanium dioxide-cobalt magnetic film as set forth in any one of claims 1 to 3 or 12 .
14. A semiconductor material having a magnetic function, the material using a titanium dioxide-cobalt magnetic film a set forth in any one of claims 1 to 3 or 12 .
15. A transparent magnet using a titanium dioxide-cobalt magnetic film as set forth in any one of claims 1 to 3 or 12 .