Nanowires, nanostructures and devices fabricated therefrom
View Patent ↗One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).
1. A nanowire, comprising:
a first segment of a first material; and
a second segment of a second material joined to said first segment;
wherein at least one of said segments has a substantially uniform diameter of less than approximately 200 nm; and
wherein said nanowire is selected from a population of nanowires having a substantially monodisperse distribution of diameters.
2. A nanowire, comprising:
a first segment of a first material; and
a second segment of a second material joined to said first segment;
wherein at least one of said segments has a substantially uniform diameter;
said nanowire displaying characteristics selected from the group consisting essentially of electronic properties, optical properties, physical properties, magnetic properties and chemical properties that are modified relative to the bulk characteristics of said first and second materials by quantum confinement effects.
3. A nanowire, comprising:
a first segment of a first material; and
a second segment of a second material joined to said first segment;
wherein at least one of said segments has a substantially uniform diameter;
said nanowire having at least one electronic property that varies as a function of diameter of said nanowire.
4. A nanowire as recited in claim 3 , wherein said at least one electronic property of said nanowire comprises band-gap energy which varies as a function of diameter of said nanowire.
5. A nanowire, comprising:
a first segment of a substantially crystalline material; and
a second segment of a substantially crystalline material joined to said first segment;
wherein at least one of said segments has a substantially uniform diameter of less than approximately 200 nm.
6. A nanowire as recited in claim 5 , wherein each of said first and said second segments comprises a doped semiconductor material.
7. A nanowire as recited in claim 6 , wherein said doped semiconductor material is selected from the group consisting essentially of a group III-V semiconductor, an elemental semiconductor, a group II-VI semiconductor, a group II-IV semiconductor, and tertiaries and quaternaries thereof.
8. A nanowire as recited in claim 5 , wherein each of said first and second segments exhibits the electrical characteristics of a homogeneously doped semiconductor.
9. A nanowire superlattice structure, comprising:
a first segment of a material;
a second segment of a material joined to said first segment; and
a third segment of a material joined to at least one of said first or second segments;
wherein at least two of said segments are longitudinally adjacent;
wherein at least two of said segments comprise compositionally different materials; and
wherein at least one of said segments has a substantially uniform diameter of less than approximately 200 nm.
10. A nanowire superlattice structure, comprising:
a first segment of a material;
a second segment of a material joined to said first segment; and
a third segment joined to at least one of said first or second segments;
wherein at least two of said segments comprise compositionally different materials; and
wherein at least two of said segments are longitudinally adjacent;
said nanowire superlattice structure displaying characteristics selected from the group consisting essentially of electronic properties, optical properties, physical properties, magnetic properties and chemical properties that are modified relative to the bulk characteristics of said first and second materials by quantum confinement effects.
11. A nanowire supertattice structure, comprising:
a first segment of a material;
a second segment of a material joined to said first segment; and
a third segment joined to at least one of said first or second segments;
wherein at least two of said segments comprise compositionally different materials; and
wherein at least two of said segments are longitudinally adjacent;
said nanowire superlattice structure having at least one electronic property that varies as a function of diameter of at least one of said segments.
12. A nanowire superlattice structure as recited in claim 11 , wherein said at least one electronic property of said nanowire supper lattice comprises band gap energy which varies as a function of diameter of said nanowire.
13. A nanowire superlattice structure, comprising:
a first segment of a substantially crystalline material;
a second segment at a substantially crystalline material joined to said first segment; and
a third segment of a substantially crystalline material joined to at least one of said first or second segments;
wherein at least two of said segments comprise compositionally different materials;
wherein at least two of said segments are longitudinally adjacent; and
wherein at least one of said segments has a substantially uniform diameter of less than approximately 200 nm.
14. A nanowire superlattice structure as recited in claim 9 , 10 , 11 , 12 , or 13 wherein each of said segments comprises a doped semiconductor material.
15. A nanowire superlattice structure as recited in claim 14 , wherein said doped semiconductor material is selected from the group consisting essentially of a group III-V semiconductor, an elemental semiconductor, a group II-VI semiconductor, a group II-IV semiconductor, and tertiaries and quaternaries thereof.
16. A nanowire superlattice structure as recited in claim 9 , 10 , 11 , 12 , or 13 , wherein each of said segments exhibits the electrical characteristics of a homogeneously doped semiconductor.
17. A superlattice structure as recited in claim 9 , 10 , 11 , 12 , 13 , 14 , 15 , or 16 , wherein said first and second segments are longitudinally adjacent, wherein said third segment comprises a shell around a core, and wherein said core comprises said first or second segment.
18. A superlattice structure as recited in claim 9 , 10 , 11 , 12 , 13 , 14 , 15 or 16 , wherein said first and second segments are longitudinally adjacent, wherein said third segment comprises a shell around a core, and wherein said core comprises said first and second segments.
19. A superlattice structure as recited in claim 9 , 10 , 11 , 12 , 13 , 14 , 15 , or 16 , wherein said first and second segments are longitudinally adjacent, wherein said first or second segment comprises a shell around a core, and wherein said core comprises said third segment.
20. A superlattice structure as recited in claim 9 , 10 , 11 , 12 , 13 , 14 , 15 or 16 , wherein said first and second segments are longitudinally adjacent wherein said first and second segments comprise a shell around a core, and wherein said core comprises said third segment.
21. A superlattice structure as recited in claim 9 , 10 , 11 , 12 , 13 , 14 , 15 or 16 , further comprising a fourth segment joined to at least one of said first or second segments, said fourth segment joined to said third segment, wherein said third and fourth segments comprise a shell around a core, and wherein said core comprises said first and second segments.