Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
View Patent ↗One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).
1. A laser, comprising:
a nanowire having a substantially uniform diameter of less than approximately 200 nm;
said nanowire configured for optical emission; and
a pumping source configured for coupling to said nanowire;
wherein said nanowire comprises a coaxial heterostructure nanowire having a core end sheath; and
wherein said pumping source comprises an electrical source in which current flows between said core and said sheath.
2. A laser as recited in claim 1 :
wherein said nanowire comprises a plurality of segments of compositionally different materials;
said segments comprising at least a first segment of a first material;
said segments comprising at least a second segment of a second material joined to a first segment.
3. A laser as recited in claim 1 , wherein said pumping source is configured for exciting a population inversion in said nanowire.
4. A laser as recited in claim 1 , further comprising:
a support material coupled to said nanowire;
wherein said support material is selected from the group consisting essentially of a solid support material, a liquid support material, a polymer support material, a glassy support material, and a substrate material.
5. A laser as recited in claim 1 , further comprising a laser cavity.
6. A laser as recited in claim 5 , wherein said cavity is contained with said nanowire.
7. A laser as recited in claim 5 , wherein said nanowire has ends that function as reflectors in said cavity.
8. A laser as recited in claim 1 , wherein said coaxial heterostructure nanowire represents a p-n junction.
9. A laser as recited in claim 1 , wherein an electrical contact is made to said core and an electrical contact is made to said sheath.
10. A laser as recited in claim 1 :
wherein said nanowire further comprises a plurality of longitudinal heterostructure segments; and
wherein said pumping source is an electrical source in which current further flows between said longitudinal segments.
11. A laser as recited in claim 10 , wherein said longitudinal heterostructure nanowire represents a p-n junction.
12. A laser as recited in claim 1 :
said nanowire having substantially faceted ends with a flat face oriented substantially normal to the longitudinal growth axis of said nanowire.
13. A laser as recited in claim 1 :
said nanowire further comprising a plurality of longitudinally adjacent segments of compositionally different materials.
14. A laser as recited in claim 1 , wherein said nanowire is an element in an array of nanowires.
15. A laser as recited in claim 14 :
wherein said nanowires in said array are aligned in substantially the same direction; and
wherein laser emission from said array is directed in a direction substantially parallel to said wires in said array.
16. A laser as recited in claim 1 , further comprising:
a plurality of quantum dots disposed in said nanowire.
17. A laser as recited in claim 16 , wherein said pumping source is configured for exciting a population inversion in said quantum dots.