IP Library › Granted Patent US 6,600,206
Granted Patent Utility
US 6,600,206 · Confirmation No. 5266

HIGH VOLTAGE SEMICONDUCTOR DEVICE HAVING HIGH BREAKDOWN VOLTAGE ISOLATION REGION

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2006-11-13 EBCC.AD Notice of Change of Address Place in File Wrapper Due to Electronic Business Center(EBC) Customer Number Update 1 View
2006-10-20 EBCC.AD Notice of Change of Address Place in File Wrapper Due to Electronic Business Center(EBC) Customer Number Update 1 View
2002-04-15 TRNA Transmittal of New Application 8 View
2002-04-15 SPEC Specification 5 View
2002-04-15 CLM Claims 2 View
2002-04-15 ABST Abstract 1 View
2002-04-15 DRW Drawings-only black and white line drawings 5 View
2002-04-15 OATH Oath or Declaration filed 4 View
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Quick Facts
Patent No.
US 6,600,206
App. No.
10/123,007
Filed
2002-04-15
Granted
2003-07-29
Pub. No.
US20020175392A1
Art Unit
2822
PTA
-129 days