Semiconductor wafer handling method
View Patent ↗A method of handling a semiconductor wafer from which a plurality of semiconductor devices are to be fabricated during a semiconductor device fabrication process. The method includes the steps of attaching a flexible connected layer to a semiconductor wafer layer mounted on a carrier substrate and separating the wafer layer from the carrier substrate while supported by the flexible connected layer.
1. A method of handling a semiconductor wafer from which a plurality of semiconductor devices are to be fabricated during a semiconductor device fabrication process, comprising the steps of:
providing a semiconductor wafer layer mounted on a carrier substrate;
forming a trench through the semiconductor wafer layer and between adjacent devices;
attaching a flexible connected layer to the semiconductor wafer layer, at least a part of the material of the flexible connected layer being present in the trenches;
removing a part of the material of the flexible connected layer within the trenches; and
separating the wafer layer from the carrier substrate while supported by the flexible connected layer.
2. A method as claimed in claim 1 , and including the step of placing the separated wafer layer onto an expandable film.
3. A method as claimed in claim 2 , and including the step of expanding the expandable film to separate individual semiconductor devices.
4. A method as claimed in claim 1 , in which the semiconductor wafer layer has a thickness less than substantially 125:μm.
5. A method as claimed in claim 4 , in which the semiconductor wafer layer has a thickness less than substantially 40:μm.
6. A method as claimed in claim 1 , in which the material of the wafer is GaAs.
7. A method as claimed in claim 1 , in which the wafer has a diameter corresponding to a mass production facility.
8. A method as claimed in claim 1 , and including the step of mechanically separating adjacent semiconductor devices.
9. A method as claimed in claim 1 , and including the step of chemically separating adjacent semiconductor devices.
10. A method as claimed in claim 1 , in which the flexible connected layer is a composite layer.
11. A method as claimed in claim 10 , in which the composite layer comprises layers of different materials.
12. A method as claimed in claim 10 , in which the composite layer comprises a layer having parts of different materials.
13. A method as claimed in claim 12 , in which the composite layer is a single layer.