IP Library Granted Patent US 6,937,846
Granted Patent B1
US 6,937,846 · App. 10/129,768 · Granted Aug 30, 2005

Pin diode circuit arrangement

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Quick Facts
Patent No.
US 6,937,846
App. No.
10/129,768
Granted
Aug 30, 2005
Kind
B1
Abstract

A PIN diode switching system is provided, particularly for the transmission stage of a mobile radio telephone, in which, when the PIN diode switching system is in a reverse-bias state, a PIN diode is isolated from its power supply via a high-impedance switch and is, thus, biased by its self-rectification to a radio-frequency voltage in order to suppress harmonic formation and radio-frequency attenuation.

Claims (14)

1. A PIN diode switching system, comprising:

a PIN diode; and

a high-impedance switch, wherein, when the PIN diode is in a reverse-biased state, the high-impedance switch isolates the PIN diode from its power supply, with the PIN diode being biased by its self-rectification to a DC voltage which corresponds approximately to a negative peak value of an associated radio-frequency voltage, in order to suppress harmonic formation and radio-frequency attenuation.

2. A PIN diode switching system as claimed in claim 1 , wherein the system is part of at least one of a transmission stage and a receiving stage of a mobile radio terminal.

3. A PIN diode switching system as claimed in claim 1 , wherein the high-impedance switch has a bipolar transistor.

4. A PIN diode switching system as claimed in claim 1 , wherein the high-impedance switch is a field-effect transistor.

5. A PIN diode switching system as claimed in claim 4 , wherein the field-effect transistor is a MOSFET.

6. A PIN diode switching system as claimed in claim 1 , wherein no auxiliary voltage source is provided for the PIN diode.

7. A PIN diode switching system as claimed in claim 1 , further comprising a passive RLC filter provided between the high-impedance switch and the PIN diode, with a capacitor acting as a charge store for the self-rectified DC voltage from the PIN diode.

8. A mobile radio terminal, comprising:

at least one of a transmission stage and a receiving stage; and

a PIN diode switching system incorporated into at least one of the transmission stage and the receiving stage, the system including both a PIN diode and a high-impedance switch, wherein, when the PIN diode is in a reverse-biased state, the high impedance switch isolates the PIN diode from its power supply, with the PIN diode being biased by its self-rectification to a DC voltage which corresponds approximately to a negative peak value of an associated radio-frequency voltage, in order to suppress harmonic formation and radio-frequency attenuation.

9. A mobile radio terminal as claimed in claim 8 , wherein the PIN diode switching system is used as a frequency band switching device for a radio-frequency power amplifier.

10. A mobile radio terminal as claimed in claim 8 , wherein the PIN diode switching system is used as an antenna switching device.

Assignments (4)
CHANGE OF NAME Recorded May 2, 2008
From: BENQ CORPORATION
To: QISDA CORPORATION
Reel/Frame 020886/0474 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 12, 2007
From: SIEMENS AG
To: BENQ CORPORATION
Reel/Frame 020096/0086 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 15, 2006
From: SIEMENS AKTIENGESELLSCHAFT
To: BENQ CORPORATION
Reel/Frame 017619/0778 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 8, 2002
From: HERZBERG, RALF
To: SIEMENS AKTIENGESELLSCHAFT
Reel/Frame 013091/0619 →