Write head with high moment film layer having tapered portion extending beyond write gap layer
View Patent ↗An inductive write head structure incorporating a high moment film in conjunction with at least one pole (e.g., the bottom pole) for use with magnetic storage media and a process for producing the same in which a lift-off photoresist mask is used prior to the deposition of the high moment sputtered film. Following the lift-off process, the high moment film remains on the bottom pole (“P 1 ”) pedestal (in the case of a PDZT type write head) or on the P 1 itself (in the case of a Stitched Pole write head). The edge of the lift-off sputtered film is then covered by cured photoresist insulation which is placed at a distance away from the air bearing surface (“ABS”). The coverage of insulation at the edge of the sputtered film is desirable in order to avoid forming a topographic step which may have undesired consequences in the subsequent top pole formation processes.
1. A write head for a computer mass storage device comprising:
a first pole;
a high moment film layer overlying at least a portion of the first pole, wherein the high moment film layer has a distal end adjacent an air bearing surface and a tapered proximal end opposite the distal end;
a write gap layer overlying a portion of the high moment film layer, wherein said portion of the high moment film layer is less than the entire high moment film layer;
a first insulating layer in an overlying relationship with said first pole, and a second insulating layer overlying and abutting at least a portion of the first insulating layer and also at least partially overlying and abutting at least a portion of said tapered proximal end of said high moment film layer; and
a second pole overlying the first and second insulating layers and the write gap layer.
2. The write head of claim 1 comprising at least one write head coil between the first pole and the second pole.
3. The write head of claim 2 , wherein the first insulating layer is in contact with said at least one write head coil.
4. The write head of claim 1 , wherein the high moment film layer comprises a tapering point, wherein a top surface of the high moment film layer between the distal end and the tapering point is substantially flat.
5. The write head of claim 4 , wherein the second insulation layer overlays the high moment film layer between the distal end and the tapering point of said high moment film layer.
6. The write head of claim 1 , wherein the second insulation layer comprises a boundary that defines a zero-throat for the second pole.
7. A write head for a computer mass storage device comprising:
a first pole comprising a first magnetic material layer;
a high moment film layer in an overlying relationship to at least a portion of said first pole, said high moment film layer having a distal end portion adjacent an air bearing surface and a tapered proximal end portion oppositely disposed thereto;
a pedestal interposed between said first pole and said high moment film layer;
a write gap layer overlying a portion of said high moment film layer, wherein the write gap layer does not overlie the entire high moment film layer;
at least one insulating layer in an overlying relationship with said first pole, said insulating layer further at least partially overlying said proximal end portion of said high moment film layer; and
a second pole comprising a second magnetic material layer overlying said at least one insulating layer and said write gap layer.
8. The write head of claim 7 wherein said pedestal comprises CoNiFe or NiFe alloy.
9. The write head of claim 7 wherein said proximal end portion of said high moment film layer extends medially a first distance beyond a proximal end portion of said pedestal.
10. The write head of claim 9 wherein said first distance is substantially 1.0 μm.
11. The write head of claim 7 further comprising:
a midcoat layer overlying said first pole and substantially coplanar with said pedestal.
12. The write head of claim 11 wherein said midcoat layer comprises Al 2 O 3 .
13. The write head of claim 7 wherein said write gap layer comprises a non-magnetic metallic or dielectric material.
14. The write head of claim 7 wherein said at least one insulating layer is further in an at least partially overlying relationship with a proximal and portion of said write gap layer.
15. The write head of claim 7 further comprising:
at least one write coil formed in said at least one insulating layer.
16. The write head of claim 7 wherein said first pole comprises NiFe or CoNiFe.
17. The write head of claim 7 wherein said high moment film layer comprises CoFeN, FeXN or CoFeXN where X is Rh, Ta, Al, Ti.
18. The write head of claim 7 wherein said high moment film layer is substantially 0.35 μm thick.
19. The write head of claim 7 wherein said second pole comprises NiFe or CoNiFe.