Suppressing radiation charges from reaching dark signal sensor
View Patent ↗An image sensor and method is provided to improve the measurement of a dark signal reference while substantially suppressing radiation charges that enter an active area of the image sensor from reaching a shielded dark signal detector. In one implementation, dark signal detector is shielded and separated from the active area to substantially reduce the radiation charges that reach the dark signal detector. In another implementation, the image sensor includes a radiation guard that is disposed between the active area and the shielded detector. When radiation or light is permitted to enter the active area, the guard when adequately biased attracts and collects radiated charges that may otherwise travel beyond the active area to reach the shielded detector and contaminate a measurement for the dark signal reference.
1. A method for measuring a dark reference level in an image sensor, comprising:
shielding an at least one dark signal detector that is located in a substrate;
detecting a charge on the at least one dark signal detector;
determining a dark reference level of the charge on the at least one dark signal detector, wherein the shielding further includes activating a guard ring in the substrate that prevents minority carriers from contact with the at least one dark signal detector; and
simultaneously reading out a radiation detector and the at least one dark signal detector, wherein the at least one dark signal detector is spaced apart from the radiation detector in order to prevent any minority carriers that are not absorbed by the radiation detector from reaching the at least one dark signal detector.
2. An image sensor that measures a radiation charge having a substrate comprising:
a radiation detector formed with the substrate;
a dark signal detector formed with the substrate a predetermined distance from the radiation detector; and
a shield associated with the dark signal detector that prevents a radiation charge from direct contact with the dark signal detector, wherein the substrate between the dark signal detector and the radiation detector is free from a presence of a device separating layer, wherein the shield is a metal shield, wherein the metal shield conducts at least one signal in the image sensor.
3. A method for measuring a dark reference level in an image sensor, comprising:
shielding an at least one dark signal detector that is located in a substrate, the substrate further including a radiation detector, wherein the substrate between the dark signal detector and the radiation detector is free from a presence of a device separating layer, wherein the shielding further includes covering the at least one dark signal detector with a metal shield, wherein the covering further includes conducting a signal associated with the image sensor through the metal shield;
detecting a charge on the at least one dark signal detector; and
determining the dark reference level of the charge on the at least one dark signal detector.
4. An apparatus for measuring a dark reference level in an image sensor, comprising:
means for shielding an at least one dark signal detector that is located in a substrate, the substrate further including a radiation detector, wherein the substrate between the dark signal detector and the radiation detector is free from a presence of a device separating layer, wherein the means for shielding further includes a means for covering the at least one dark signal detector with a metal shield, wherein the means for covering further includes a means for conducting a signal associated with the image sensor through the metal shield;
means for detecting a charge on the at least one dark signal detector; and
a means for determining the dark reference level of the charge on the at least one dark signal detector.
5. An image sensor that measures a radiation charge having a substrate comprising:
a radiation detector formed with the substrate;
a dark signal detector formed with the substrate a predetermined distance from the radiation detector;
a shield associated with the dark signal detector that prevents a minority carrier from direct contact with the dark signal detector; and
a guard ring in the substrate disposed between the radiation detector and the dark signal detector, wherein the guard ring is disposed beneath the shield.
6. An image sensor that measures a radiation charge having a substrate comprising:
a radiation detector formed with the substrate;
a dark signal detector formed with the substrate a predetermined distance from the radiation detector;
a shield associated with the dark signal detector that prevents a minority carrier from direct contact with the dark signal detector; and
a guard ring in the substrate disposed between the radiation detector and the dark signal detector, wherein the guard ring has a guard ring, doping level that is at least approximately equal to a dark signal detector doping level of the dark signal detector.
7. An image sensor that measures a radiation charge having a substrate comprising:
a radiation detector formed with the substrate;
a dark signal detector formed with the substrate a predetermined distance from the radiation detector;
a shield associated with the dark signal detector that prevents a minority carrier from direct contact with the dark signal detector; and
a guard ring in the substrate disposed between the radiation detector and the dark signal detector, wherein the guard ring has a width equal at least 5 microns and the dark signal detector is located at least 40 microns from a closest radiation detector of a plurality of radiation detectors.
8. An image sensor that measures a radiation charge having a substrate comprising:
a radiation detector formed with the substrate;
a dark signal detector formed with the substrate a predetermined distance from the radiation detector;
a shield associated with the dark signal detector that prevents a minority carrier from direct contact with the dark signal detector; and
a guard ring in the substrate disposed between the radiation detector and the dark signal detector, wherein the guard ring has a width of at least 10 microns and the dark signal detector is located at 40 microns from a closest radiation detector of a plurality of radiation detectors.
9. An image sensor that measures a radiation charge having a substrate comprising:
a radiation detector formed with the substrate;
a plurality of dark signal detectors spaced apart from the radiation detector in order to prevent minority carriers that are not absorbed by the radiation detector from reaching the plurality of dark signal detectors, wherein the radiation detector and the plurality of dark signal detectors are adapted to be simultaneously read out;
a shield associated with the dark signal detector that prevents at least some of the minority carriers from direct contact with the plurality of dark signal detectors; and
a guard ring in the substrate disposed between the radiation detector and the plurality of dark signal detectors, wherein the guard ring is disposed beneath the shield.
10. An image sensor that measures a radiation charge having a substrate comprising:
a radiation detector formed with the substrate;
a plurality of dark signal detectors spaced apart from the radiation detector in order to prevent minority carriers that are not absorbed by the radiation detector from reaching the plurality of dark signal detectors, wherein the radiation detector and the plurality of dark signal detectors are adapted to be simultaneously read out;
a shield associated with the dark signal detector that prevents at least some of the minority carriers from direct contact with the plurality of dark signal detectors; and
a guard ring in the substrate disposed between the radiation detector and the plurality of dark signal detectors, wherein the guard ring has a guard ring doping level that is at least approximately equal to a dark signal detector doping level of the plurality of dark signal detectors.
11. The image sensor according to claim 10 , wherein the guard ring and the plurality of dark signal detectors each have an n-type doping.
12. The image sensor according to claim 10 , wherein the substrate has a p-type doping.