Chemical vapor deposition apparatus having a susceptor with a grounded lift pin
View Patent ↗A chemical vapor deposition apparatus includes a ground voltage source, a susceptor for placing a substrate, a center pin passing through the susceptor for lifting the substrate, and a ground member for connecting the center pin to the ground voltage source.
1. A chemical vapor deposition apparatus, comprising:
a ground voltage source;
a susceptor for placing a substrate, the susceptor being connected to the ground voltage source via a metal line;
a center pin passing through the susceptor configured to lift the substrate; and
a ground member electrically connecting the center pin to the metal line,
wherein the ground member extends along and is attached to an entire axial length of the center pin.
2. A chemical vapor deposition apparatus, comprising:
a ground voltage source;
a susceptor for placing a substrate, the susceptor being connected to the ground voltage source via a metal line;
a center pin passing through the susceptor configured to lift the substrate; and
a ground member electrically connecting the center pin to the metal line,
wherein the ground member extends along and is attached to an entire axial length of the center pin, and the center pin includes a head portion connected to the substrate and a head supporter for supporting the head portion.
3. The apparatus according to claim 2 , wherein the ground member is formed between the head portion and the head supporter.
4. The apparatus according to claim 2 , wherein the ground member passes through a center portion of the head supporter.
5. The apparatus according to claim 2 , wherein the ground member is formed along one side of the head supporter.
6. The apparatus according to claim 1 , wherein the ground member includes an electrically conductive metal.
7. The apparatus according to claim 2 , wherein the head portion includes aluminum.
8. The apparatus according to claim 2 , wherein the head supporter includes a ceramic material.
9. The apparatus according to claim 1 , further comprising a heating coil within the susceptor.
10. A chemical vapor deposition apparatus, comprising:
a chamber;
a ground voltage source;
a susceptor within the chamber, the susceptor being connected to the ground voltage source via a metal line;
a substrate on the susceptor;
a center pin passing through the susceptor configured to lift the substrate;
a plate for driving the center pin; and
a ground member electrically connecting the center pin to the metal line,
wherein the ground member extends along and is attached to an entire axial length of the center pin.
11. A chemical vapor deposition apparatus, comprising:
a chamber;
a ground voltage source;
a susceptor within the chamber, the susceptor being connected to the ground voltage source via a metal line;
a substrate on the susceptor;
a center pin passing through the susceptor configured to lift the substrate;
a plate for driving the center pin; and
a ground member electrically connecting the center pin to the metal line,
wherein the ground member extends along and is attached to an entire axial length of the center pin, and the center pin includes a head portion contacting the substrate and a head supporter for supporting the head portion.
12. The apparatus according to claim 11 , wherein the ground member is formed between the head portion and the head supporter.
13. The apparatus according to claim 12 , wherein the ground member passes through a center portion of the head supporter.
14. The apparatus according to claim 12 , wherein the ground member is formed along one side of the head supporter.
15. The apparatus according to claim 12 , wherein the ground member includes an electrically conductive metal.
16. The apparatus according to claim 10 , wherein the head portion includes aluminum.
17. The apparatus according to claim 13 , wherein the head supporter includes a ceramic material.
18. The apparatus according to claim 10 , further comprising a heating coil within the susceptor.
19. The apparatus according to claim 1 , wherein the ground member is directly connected to the center pin.
20. The apparatus according to claim 10 , wherein the ground member is directly connected to the center pin.
21. A chemical vapor deposition apparatus, comprising:
a ground voltage source;
a susceptor having a surface for placing a substrate, the susceptor being connected to the ground voltage source via a metal line such that the surface of the susceptor is grounded during chemical vapor deposition;
a T-shaped center pin passing through the susceptor configured to lift the substrate, the center pin including a head portion and a head supporter; and
a ground member electrically connecting the center pin to the metal line, wherein the head supporter has a groove formed along its entire axial length, and the ground member extends along and is attached to the entire axial length of the center pin within the groove.
22. The apparatus according to claim 21 , wherein the head portion is formed with a conductive material, and the head supporter is formed with a material having a low coefficient of thermal expansion.
23. The apparatus according to claim 22 , wherein the conductive material includes aluminum, and the material having a low coefficient of thermal expansion includes ceramic.
24. The apparatus according to claim 21 , wherein the head portion is coated with an insulating material.
25. The apparatus according to claim 24 , wherein the insulating material includes aluminum oxide.
26. The apparatus according to claim 21 , wherein the susceptor and the center pin are commonly grounded such that a uniform electric field is generated over the first and second surfaces of the susceptor and the center pin, respectively.