IP Library Granted Patent US 6,882,247
Granted Patent B2
US 6,882,247 · App. 10/146,186 · Granted Apr 19, 2005

RF filtered DC interconnect

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Quick Facts
Patent No.
US 6,882,247
App. No.
10/146,186
Granted
Apr 19, 2005
Kind
B2
Abstract

A filtered button DC interconnect employing a compressible conductor such as a finely wound wire mesh imbedded within a series of dielectric and ferrite cylinders. The compressible conductor is captivated within the series of dielectric and ferrite cylinders to ensure proper contact with mating surfaces of interconnected circuits. The interconnect serves as an RF filter by providing rejection of RF and microwave frequencies between the interconnected circuits.

Claims (33)

1. A DC interconnect structure for providing a DC interconnect between a first circuit board and a second circuit board in an RF circuit, the interconnect structure comprising:

a first dielectric cylindrical structure having a first through opening;

a second dielectric cylindrical structure having a second through opening;

a ferrite ring structure sandwiched between the first and second dielectric structures;

an outer conductive o-ring structure encircling the ferrite ring structure;

a compressive conductor structure passed through the first and second cylindrical structures, the ferrite ring structure and the o-ring structure and having first and second tip portions protruding from the respective first and second cylindrical structures,

the interconnect structure providing a DC Interconnect between the circuit boards while suppressing RF signals from passing through the interconnect.

2. The structure of claim 1 , wherein the compressive conductor structure is a wire mesh structure.

3. The structure of claim 1 , wherein the first and second dielectric structures are fabricated of a high K dielectric material.

4. The structure of claim 1 , wherein the first dielectric cylindrical structure has a first conductive outer surface structure, and the second dielectric cylindrical structure has a second conductive outer surface structure.

5. The structure of claim 4 , wherein the first conductive outer surface structure is a first plated layer, and the second conductive outer surface structure is a second plated layer.

6. The structure of claim 1 , wherein the o-ring structure is an elastic structure, comprising an elastomeric material having a metal filler.

7. The structure of claim 1 , wherein the ferrite ring structure has a nominal opening having a diameter larger than an outer diameter of the compressive conductor structure, the ferrite ring structure captivating the compressive conductor structure.

8. An RF circuit, comprising:

a conductive chassis structure having generally planar opposed first and second surfaces, and an opening formed between the first and second surfaces;

a first circuit board structure positioned adjacent the first surface of the chassis structure;

a second circuit board structure positioned adjacent the second surface of the chassis structure;

a DC interconnect structure positioned in said chassis opening in electrical contact with the first and second circuit board structures, the interconnect structure comprising:

a first dielectric cylindrical structure having a first through opening and a first conductive outer layer;

a second dielectric cylindrical structure having a second through opening and a second conductive outer layer;

a ferrite ring structure sandwiched between the first and second dielectric structures;

an outer o-ring structure encircling the ferrite ring structure;

a compressible conductor structure passed through the first and second cylindrical structures, the ferrite ring structure and the o-ring structure and having first and second tip portions protruding from the respective first and second cylindrical structures,

the interconnect structure providing a DC interconnect between the first and second circuit boards while suppressing RF signals from passing through the interconnect.

9. The circuit of claim 8 , wherein said o-ring structure is in contact with a conductive wall surface defining said chassis opening.

10. The circuit of claim 8 , wherein said first tip portion is compressed against said first circuit board to make a first physical and electrical contact with the first circuit board, and said second tip portion is compressed against said second circuit board to make a second physical and electrical contact with the second circuit board.

11. The circuit of claim 10 , wherein said first and second physical and electrical contacts are free of any solder.

12. The circuit of claim 8 wherein the compressible conductor structure is a wire mesh structure.

13. The structure of claim 8 , wherein the first and second dielectric cylindrical structures are fabricated of a high K dielectric material.

14. The structure of claim 8 , wherein the first dielectric cylindrical structure has a first conductive outer surface structure, and the second dielectric cylindrical structure has a second conductive outer surface structure.

15. The structure of claim 14 , wherein the first conductive outer surface structure is a first plated layer, and the second conductive outer surface structure is a second plated layer.

16. The structure of claim 8 , wherein the o-ring structure is an elastic structure, comprising an elastomeric material having a metal filler.

17. The structure of claim 8 , wherein the ferrite ring structure has a nominal opening having a diameter larger than an outer diameter of the compressible conductor structure, the ferrite ring structure captivating the compressible conductor structure.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 12, 2012
From: RAYTHEON COMPANY
To: OL SECURITY LIMITED LIABILITY COMPANY
Reel/Frame 029117/0335 →