Method of adjusting a substrate size of liquid crystal display device
View Patent ↗A method of adjusting a size of a substrate of a liquid crystal display device includes determining if first and second substrates that are sealed together and have a liquid crystal material disposed therebetween are mutually aligned, one of the first and second substrates having a deposition layer formed thereupon, and controlling an amount of deposition stress of the deposition layer when the first and second substrates are not mutually aligned.
1. A method of adjusting a size of a substrate of a liquid crystal display device, comprising:
determining if first and second substrates that are sealed together and have a liquid crystal material disposed therebetween are mutually aligned, one of the first and second substrates having a deposition layer formed thereupon; and
controlling an amount of deposition stress of the deposition layer when the first and second substrates are not mutually aligned,
wherein controlling an amount of deposition stress includes adjusting a size of the one of the first and second substrates having the deposition layer formed thereupon.
2. The method according to claim 1 , wherein the first substrate is a thin film transistor substrate having intersecting signal lines along a first direction and a second direction perpendicular to the first direction, and thin film transistors formed at the intersecting signal lines.
3. The method according to claim 1 , wherein the second substrate is a color filter substrate having a plurality of color filters, and a black matrix formed between the color filters.
4. The method according to claim 1 , wherein controlling an amount of deposition stress includes changing process parameters of a deposition process.
5. The method according to claim 4 , wherein the process parameters include a radio frequency power of a deposition apparatus and a gas flow amount provided into a vacuum chamber of the deposition apparatus.
6. The method according to claim 5 , wherein a size of the one of the first and second substrates having a deposition layer formed thereon is increased by an increase in the radio frequency power of the deposition apparatus.
7. The method according to claim 5 , wherein a size of the one of the first and second substrates having a deposition layer formed thereon is decreased by a decrease in the radio frequency power of the deposition apparatus.
8. The method according to claim 5 , wherein a size of the one of the first and second substrates having a deposition layer formed thereon is increased by an increase in the gas flow amount.
9. The method according to claim 5 , wherein a size of the one of the first and second substrates having a deposition layer formed thereon is decreased by a decrease in the gas flow amount.
10. The method according to claim 1 , wherein the deposition layer includes a gate insulating layer deposited on an entire surface of the substrate covering a gate line and a gate electrode of a thin film transistor.
11. The method according to claim 10 , wherein the gate insulating layer includes an inorganic material.
12. The method according to claim 11 , wherein the inorganic material includes at least one of SiN x and SiO x .
13. The method according to claim 1 , wherein the deposition layer includes a passivation layer deposited on an entire surface of the substrate covering a thin film transistor and a plurality of signal lines.
14. The method according to claim 13 , wherein the passivation layer includes an inorganic material.
15. The method according to claim 14 , wherein the inorganic material includes at least one of SiN x and SiO x .
16. A method of fabricating a liquid crystal display device, comprising:
applying a first stress to a plurality of substrates, each having different material compositions;
measuring a size change of each of the plurality of substrates;
determining a first substrate and a second substrate having equivalent size changes from the measured size change of each of the plurality of substrates; and
sealing the first and second substrates having a liquid crystal material therebetween.
17. The method according to claim 16 , wherein the first substrate is a thin film transistor substrate having intersecting signal lines along a first direction and a second direction perpendicular to the first direction, and thin film transistors formed at the intersecting signal lines.
18. The method according to claim 16 , wherein the second substrate is a color filter substrate having a plurality of color filters, and a black matrix formed between the color filters.