Thermal control interface coatings and pigments
View Patent ↗The invention provides an optical structure with low chroma and brightness in the visible region and low emissivity in the infrared region. The optical structure includes an interference structure having an infrared reflective layer and an infrared absorbing thin film layer. These layers are in turn separated by a thin film spacer of a dielectric or semiconductor material. The reflectivity and transmission of the layers are selectively controlled through the thickness of the layers such that the visual reflectivity and color is independent of the infrared properties of the absorber and reflector layers.
1. A particle comprising:
a thickening layer having a first surface, a second surface, and a thickening layer thickness;
a first optical interference structure having a first chroma not more than 20 and an infrared reflectivity greater than 50% disposed on the first surface; and
a second optical interference structure having a second chroma less than 20 and an infrared reflectivity greater than 50% disposed on the second surface.
2. The particle of claim 1 wherein the thickening layer thickness is between 10 nm–10 microns.
3. A particle comprising:
a thickening layer having a first surface, a second surface, and a thickening layer thickness;
a first optical interference structure having a first chroma not more than 20 and an infrared reflectivity greater than 50% disposed on the first surface; and
a second optical interference structure having a second chroma less than 20 and an infrared reflectivity greater than 50% disposed on the second surface, wherein the thickening layer thickness is between 100 nm–2 microns.
4. A particle comprising:
a thickening layer having a first surface, a second surface, and a thickening layer thickness;
a first optical interference structure having a first chroma not more than 20 and an infrared reflectivity greater than 50% disposed on the first surface; and
a second optical interference structure having a second chroma less than 20 and an infrared reflectivity greater than 50% disposed on the second surface, wherein the thickening layer thickness is between 200–500 nm.
5. The particle of claim 1 wherein the thickening layer comprises silicon oxide.
6. The particle of claim 1 wherein the thickening layer comprises silicon oxide at least 200 nm thick, a first layer of opaque reflector disposed on the first surface, and a second layer of opaque reflector disposed on the second surface.