Field effect transistor on a substrate with (111) orientation having zirconium oxide gate insulation and cobalt or nickel silicide wiring
View Patent ↗Diffusion layers 2 - 5 are formed on a silicon substrate 1 , and gate dielectric films 6, 7 and gate electrodes 8, 9 are formed on these diffusion layers 2 - 5 so as to be MOS transistors. Zirconium oxide or hafnium oxide is used as a major component of gate dielectric films 6, 7 . Gate dielectric films 6, 7 are formed, for example, by CVD. As substrate 1 , there is used one of which the surface is (111) crystal face so as to prevent diffusion of oxygen into silicon substrate 1 or gate electrodes 8, 9 . In case of using a substrate of which the surface is (111) crystal face, diffusion coefficient of oxygen is less than 1/100 of the case in which a silicon substrate of which the surface is (001) crystal face is used, and oxygen diffusion is controlled. Thus, oxygen diffusion is controlled, generation of leakage current is prevented and properties are improved. There is realized a semiconductor device having high reliability and capable of preventing deterioration of characteristics concomitant to miniaturization.
1. A semiconductor device comprising a silicon substrate, gate dielectric films mostly composed of zirconium oxide and formed on a major surface of said silicon substrate, and gate electrode films formed in contact with said gate dielectric films, said major surface of said silicon substrate being parallel to Si (111) crystal face,
wherein said gate electrode films are mostly composed of cobalt silicide or silicon, and
wherein said gate dielectric films contain hafnium in a concentration of from 0.01 at. % inclusive to 15 at. % inclusive.
2. A semiconductor device according to claim 1 , wherein said gate dielectric films contain titanium in a concentration of from 0.005 at. % inclusive to 15 at. % inclusive.
3. A semiconductor device according to claim 2 , wherein said gate dielectric films contain hafnium in a concentration of from 0.04 at. % inclusive to 12 at. % inclusive.
4. A semiconductor device according to claim 2 , wherein said gate dielectric films contain titanium in a concentration of from 0.02 at. % inclusive to 8 at. % inclusive.
5. A semiconductor device comprising a silicon substrate, gate dielectric films formed on a major surface of said silicon substrate, gate electrode films formed on said gate dielectric films, and wiring films for contact formed on said major surface of said silicon substrate, said wiring firms being mostly composed of cobalt silicide or nickel silicide, said gate dielectric films being mostly composed of hafnium oxide, and said major surface being formed so as to be Si (111) crystal face, wherein said gate dielectric films contain titanium in a concentration of from 0.02 at. % inclusive to 8 at. % inclusive.
6. A semiconductor device according to claim 5 , wherein said gate electrode films are mostly composed of cobalt silicide or silicon.
7. A semiconductor device comprising a silicon substrate, gate dielectric films formed on a major surface of said silicon substrate, gate electrode films formed on said gate dielectric films, and wiring films for contact formed on said major surface of said silicon substrate, said wiring firms being mostly composed of cobalt silicide or nickel silicide, said major surface being formed so as to be (111) crystal face of the substrate, wherein the substrate having (111) orientation is used to prevent diffusion of cobalt from the wiring films into the substrate, wherein said gate dielectric films contain hafnium in a concentration of from 0.01 at. % inclusive to 15 at. % inclusive.
8. A semiconductor device comprising a silicon substrate, gate dielectric films formed on a major surface of said silicon substrate, gate electrode films formed on said gate dielectric films, and wiring films for contact formed on said major surface of said silicon substrate, said wiring firms being mostly composed of cobalt silicide or nickel silicide, said major surface being formed so as to be (111) crystal face of the substrate, wherein the substrate having (111) orientation is used to prevent diffusion of cobalt from the wiring films into the substrate, wherein said gate dielectric films contain titanium in a concentration of from 0.005 at. % inclusive to 15 at. % inclusive.