Amorphous silicon deposition for sequential lateral solidification
View Patent ↗An amorphous silicon deposition method includes the step of forming a buffer layer on a transparent substrate; depositing amorphous silicon on the buffer layer by a thickness ranging from 600 to 2,000 angstroms; repeatedly irradiating the amorphous silicon layer to completely melt using a laser beam that has a complete melting energy density; and moving the laser beam by a transaction distance for the next laser beam irradiation.
1. A method for fabricating a display device having a plurality of pixels, comprising:
forming a buffer layer on a substrate;
forming a silicon layer having a thickness of about 600Å to about 2000Å on the buffer layer;
crystallizing the silicon layer into a polycrystalline silicon layer by a sequential lateral solidification method (SLS) in which the silicon layer is repeatedly irradiated with a laser beam having an energy density corresponding to a complete melting regime as an irradiation position of the laser beam on the silicon layer moves by a translation distance; and
forming a plurality of thin film transistors using the polycrystalline silicon layer to drive the plurality of pixels.
2. The method according to claim 1 , further comprising annealing the silicon layer between said irradiations.
3. The method according to claim 1 , wherein the laser beam has an energy density between 310 and 515 mJ/cm 2 .
4. The method according to claim 1 , wherein the maximum translation distance ranges from 0.2 to 1.0 micrometers.
5. The method according to claim 1 , wherein the minimum translation distance ranges from 0.04 to 0.1 micrometers.
6. The method according to claim 1 , wherein the silicon layer has a thickness of about 1000Å to about 2000 Å.