Field-effect transistor substantially consisting of organic materials
View Patent ↗An organic field-effect transistor is disclosed in which an insulating layer having a thickness of 0.3 m or less is provided on a substantially planar electrode layer. This transistor has a channel length down to 2 m, satisfying the condition for voltage amplification well below 10V, and has an on/off ratio of about 25.
1. An integrated circuit comprising:
a top gate field-effect transistor comprising a stack of:
an organic first electrode layer accommodating a source electrode and a drain electrode and having a patchwork pattern of electrically conducting areas and electrically insulating areas;
an organic semiconducting layer on the organic first electrode layer;
an organic electrically insulating layer on the organic semiconducting layer, and
an organic second electrode layer, accommodating a gate electrode, on the organic electrically insulating layer,
wherein the thickness of the organic electrically insulating layer is greater than the thickness of the first and/or second electrode layer but less than 0.3 μm.
2. A top gate field-effect transistor comprising a stack of:
an organic first electrode layer accommodating a source electrode and a drain electrode and having a patchwork pattern of electrically conducting areas and electrically insulating areas;
an organic semiconducting layer on the organic first electrode layer;
an organic electrically insulating layer on the organic semiconducting layer, and
an organic second electrode layer, accommodating a gate electrode, on the organic electrically insulating layer, wherein the thickness of the organic electrically insulating layer is greater than the thickness of the first and/or second electrode layer but less than 0.3 μm.
3. The field-effect transistor of claim 2 wherein the electrically conducting areas differ in thickness from the electrically insulating areas by less than 0.05 μm on the organic first electrode layer.
4. The field-effect transistor of claim 1 wherein the electrically conducting areas differ in thickness from the electrically insulating areas by less than 0.05 μm on the organic first electrode layer.