IP Library Granted Patent US 6,846,370
Granted Patent B2
US 6,846,370 · App. 10/190,292 · Granted Jan 25, 2005

Resistive materials

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Quick Facts
Patent No.
US 6,846,370
App. No.
10/190,292
Granted
Jan 25, 2005
Kind
B2
Abstract

Electrically resistive material including platinum and from about 5 and about 70 molar percent or iridium, ruthenium or mixtures thereof, calculated based on platinum as 100%, are disclosed.

Claims (12)

1. An electrically resistive material comprising platinum co-deposited with about 5 to about 70 molar percent of iridium, ruthenium or mixtures thereof, calculated based on platinum as 100%, wherein from about 50 to about 90 molar percent of the iridium, ruthenium or mixtures thereof is in elemental metal form and about 10 to about 50 mole percent is in oxide form, wherein the electrically resistive material has a thermal coefficient of resistivity of 500 ppm/° C. or less measured at 100 ohms per square at 25°.

2. The electrically resistive material of claim 1 wherein the electrically resistive material is a thin film.

3. The electrically resistive material of claim 1 comprising iridium.

4. The electrically resistive material of claim 1 comprising from about 20 to about 70 mole percent iridium calculated based on platinum as 100%.

5. The electrically resistive material of claim 1 comprising ruthenium.

6. The electrically resistive material of claim 1 comprising from about 20 to about 10 molar percent of said iridium, ruthenium or mixtures thereof in oxide form.

7. The electrically resistive material of claim 1 having a thickness of from 5 to about 500 nm.

8. The electrically resistive material of claim 1 having a thickness of from about 5 to about 100 nm.

9. The electrically resistive material of claim 1 having a thickness of from about 5 to about 20 nm.

10. The electrically resistive material of claim 1 having a thermal coefficient of resistivity of 350 ppm/° C. or less measured at 100 ohms per square at 25° C.

11. The electrically resistive material of claim 1 having a thermal coefficient of resistivity of 200 ppm/° C. or less measured at 100 ohms per square at 25° C.

12. The electrically resistive material of claim 1 having a thermal coefficient of resistivity of 100 ppm/° C. or less measured at 100 ohms per square at 25° C.

Assignments (4)
SECURITY INTEREST Recorded Mar 7, 2006
From: NGIMAT CO.
To: SILICON VALLEY BANK
Reel/Frame 017303/0974 →
SECURITY AGREEMENT Recorded Mar 2, 2006
From: NGIMAT CO.
To: NORO-MOSELEY PARTNERS IV, L.P.; NORO-MOSELEY PARTNERS IV-B, L.P.; HUNT, ANDREW T.; SMITH, DAVID; HENDERSON, ROY
Reel/Frame 017240/0307 →
SECURITY INTEREST Recorded Jan 12, 2004
From: MICROCOATING TECHNOLOGIES, INC.
To: SILICON VALLEY BANK
Reel/Frame 014901/0263 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 10, 2003
From: ALLEN, CRAIG S.; SCHEMENAUR, JOHN; SENK, DAVID D.; LANGLOIS, MARC; HU, XIAODONG; HWANG, JAN-TZYY-JIUAN; READY, JUD; TOMOV, TRIFON
To: SHIPLEY COMPANY, L.L.C.
Reel/Frame 016187/0762 →