Method for forming a dielectric film
View Patent ↗A method for forming a dielectric film in a PDP includes the steps of: reducing the ambient pressure of an insulating film including a dielectric material before the ambient temperature reaches the reaction temperature of the dielectric material; introducing heated gas to increase the ambient pressure up to the atmospheric pressure while maintaining the ambient temperature at the reaction temperature; and lowering the ambient temperature down to the solidifying temperature of the insulating film while maintaining the atmospheric ambient pressure.
1. A method for forming a dielectric film, comprising the steps of:
forming an insulating film including therein a dielectric material onto a substrate;
raising an ambient temperature of said insulating film up to a reaction temperature of said dielectric material or above and reducing an ambient pressure of said insulating film before said ambient temperature reaches said reaction temperature;
increasing said reduced ambient pressure up to a substantially atmospheric pressure at a specified timing while maintaining said ambient temperature substantially at said reaction temperature or above; and
lowering said ambient temperature down to a solidifying temperature of said insulating film while maintaining said ambient pressure at said substantially atmospheric pressure.
2. The method according to claim 1 , wherein said step of increasing said reduced ambient pressure uses ambient gas heated substantially at said reaction temperature.
3. The method according to claim 1 , wherein said dielectric material includes glass.
4. The method according to claim 3 , wherein said glass is baked around between 450 and 700 degrees C.
5. The method according to claim 1 , further comprising the step of forming a plurality of electrodes on said substrate prior to forming said insulating film.
6. The method according to claim 1 , wherein said ambient pressure is atmospheric pressure.
7. The method according to claim 1 , wherein said ambient pressure is about 100 hPa.
8. A method for forming a dielectric film, comprising the steps of:
applying an insulating film including therein a dielectric material having an organic component onto a substrate;
raising an ambient temperature of said insulating film up to a reaction temperature of said dielectric material or above and reducing an ambient pressure of said insulating film before said ambient temperature reaches said reaction temperature to decompose the organic component;
increasing said reduced ambient pressure up to a substantially atmospheric pressure at a specified timing while maintaining said ambient temperature substantially at said reaction temperature or above; and
lowering said ambient temperature down to a solidifying temperature of said insulating film while maintaining said ambient pressure at said substantially atmospheric pressure to reduce a number of bubbles in said insulating film.
9. A method of degassing a dielectric film, comprising the steps of:
applying an insulating film including therein a dielectric material onto a substrate;
raising a temperature of said insulating film up to a reaction temperature of said dielectric material or above and reducing a pressure of said insulating film below atmospheric pressure before said temperature reaches said reaction temperature;
increasing said reduced pressure up to substantially atmospheric pressure at a specified timing while maintaining said temperature substantially at said reaction temperature or above; and
lowering said temperature down to a solidifying temperature of said insulating film while maintaining said pressure at said substantially atmospheric pressure to reduce a number of bubbles in said insulating film.