Magnetoresistive head
View Patent ↗A magnetoresistive head of CPP structure in which an insulating protective film 20 covers at least part of the boundary between the lower shield layer 10 and the non-magnetic film 11 adjacent thereto so as to reduce the area of the lower shield layer which is exposed on the surface of the substrate when the magnetoresistive film is patterned. This construction minimizes damage that occurs when the magnetoresistive film is patterned and also reduces the fraction defective due to current leakage across the upper and lower shields.
1. A magnetoresistive head of a type comprising a magnetoresistive film arranged between a lower shield layer and an upper shield layer, and a pair of electrodes to apply sensing current in a thickness direction of the magnetoresistive film,
wherein the lower shield layer has a non-magnetic layer adjacent to it on a same layer level as the lower shield layer, and the non-magnetic layer is separated from the lower shield layer at a boundary at least part of which is covered with an insulating protective film,
wherein the lower shield layer and the non-magnetic layer adjacent thereto are formed such that the non-magnetic layer has a height higher than the lower shield layer and they differ in height and they have a difference in level at their boundary.
2. The magnetoresistive head as defined in claim 1 , wherein the insulating protective film only covers a portion of the lower shield layer, and the magnetoresistive head comprising a secondary insulating protective film covering a secondary portion of the lower shield layer.
3. The magnetoresistive head as defined in claim 2 , wherein the magnetoresistive film directly contacts a contacting portion of the lower shield layer, and wherein a combination of the insulating protective film and the secondary insulating protective film covers portions of the lower shield layer other than the contacting portion.
4. The magnetoresistive head as defined in claim 1 , wherein the insulating protective film is an etching-charge insulating protective film.
5. A magnetic data storage system which has the magnetoresistive head defined in claim 1 .
6. The magnetoresistive head as defined in claim 1 , comprising a detecting means to detect a change in resistance which the magnetoresisitive film makes as an external magnetic field changes.
7. A magnetoresistive head of a type comprising a magnetoresistive film arranged between a lower shield layer and an upper shield layer, and a pair of electrodes to apply sensing current in a thickness direction of the magnetoresistive film,
wherein the lower shield layer has a non-magnetic layer adjacent to it within the same layer, and the non-magnetic layer the lower shield layer abut within the same layer at a boundary having at least part thereof covered with an insulating protective film,
wherein the lower shield layer and the non-magnetic layer adjacent thereto are formed such that the non-magnetic layer has a height higher than the lower shield layer at the boundary, and the lower shield layer and the non-magnetic layer differ in thickness from one another.
8. The magnetoresistive head as defined in claim 7 , wherein the insulating protective film only covers a portion of the lower shield layer, and the magnetoresistive head comprising a secondary insulating protective film covering a secondary portion of the lower shield layer.
9. The magnetoresistive head as defined in claim 8 , wherein the magnetoresistive film directly contacts a contacting portion of the lower shield layer, and wherein a combination of the insulating protective film and the secondary insulating protective film covers portions of the lower shield layer other than the contacting portion.
10. The magnetoresistive head as defined in claim 7 , wherein the insulating protective film is an etching-charge insulating protective film.
11. A magnetic data storage system which has the magnetoresistive head defined in claim 7 .
12. The magnetoresistive head as defined in claim 7 , comprising a detecting means to detect a change in resistance which the magnetoresisitive film makes as an external magnetic field changes.