Method of deforming a pattern and semiconductor device formed by utilizing deformed pattern

1. A method of deforming a pattern, said method comprising the steps of:

forming, over a substrate, a layered-structure with an upper surface including at least one selected region and at least a re-flow stopper wall, wherein said re-flow stopper wall extends outside said selected region and separate from said selected region;

selectively forming at least one pattern on said selected region; and

causing a re-flow of said pattern, wherein a part of an outwardly re-flowed pattern is flowed into said re-flow stopper wall, and then an outward re-flow of said pattern is restricted by said re-flow stopper wall extending outside of said pattern, thereby to form a deformed pattern with at least an outside edge part defined by an outside edge of said re-flow stopper wall.

2. The method as claimed in claim 1 , wherein said re-flow stopper wall excludes a channel region, and parts of said outwardly re-flowed pattern are flowed into both said re-flow stopper wall and said channel region.

3. The method as claimed in claim 2 , wherein said re-flow stopper wall is separate from said channel region.

4. The method as claimed in claim 3 , wherein said re-flow stopper wall is positioned indirectly over a gap between a gate electrode and at least a dummy gate electrode.

5. The method as claimed in claim 3 , wherein said re-flow stopper wall comprises a recessed trench groove formed in said layered-structure.

6. The method as claimed in claim 3 , wherein said re-flow stopper wall comprises a first gap between a source electrode and a dummy source electrode and a second gap between a drain electrode and a dummy drain electrode.

7. The method as claimed in claim 2 , wherein said re-flow stopper wall is adjacent to said channel region.

8. The method as claimed in claim 7 , wherein said re-flow stopper wall is positioned indirectly over a gap between a gate electrode and at least a dummy gate electrode.

9. The method as claimed in claim 7 , wherein said re-flow stopper wall is defined by both a side wall of an extending layer from one of source and drain electrodes and a stepped portion of said channel region, where said stepped portion is positioned indirectly over an edge of a gate electrode.

10. The method as claimed in claim 1 , wherein said re-flow stopper wall includes a channel region, and a part of said outwardly re-flowed pattern is flowed into said re-flow stopper wall.

11. The method as claimed in claim 10 , wherein said re-flow stopper wall and said channel region are in forms of annular shape, and an outside peripheral edge of said re-flow stopper wall encompasses an outside peripheral edge of said channel region, and said outside peripheral edge of said re-flow stopper wall is defined by stepped portions of source and drain electrodes, where said stepped portions of said source and drain electrodes are positioned indirectly over a stepped portion of a gate electrode, and where said stepped portion of said gate electrode extends in a form of annular shape and defines a depressed region of said gate electrode.

12. The method as claimed in claim 1 , wherein said re-flow stopper wall is included in a channel region which extends outside said selected region, and a part of said outwardly re-flowed pattern is flowed into said channel region.

13. The method as claimed in claim 12 , wherein said re-flow stopper wall is positioned indirectly over a wall of a gate electrode.

14. The method as claimed in claim 1 , wherein said re-flow stopper wall just overlaps a channel region which extends outside said selected region, and a part of said outwardly re-flowed pattern is flowed into said re-flow stopper wall.

15. The method as claimed in claim 1 , wherein said re-flow stopper wall and said channel region are an annular shaped region which is defined by an island-shaped electrode and an annular-shaped electrode which surrounds said island-shaped electrode completely.

16. The method as claimed in claim 1 , wherein said re-flow stopper wall surrounds said selected region completely.

17. The method as claimed in claim 1 , wherein said re-flow stopper wall surrounds said selected region incompletely.

18. The method as claimed in claim 1 , wherein said selected region comprises a set of plural selected regions separate from each other and adjacent to each other, and said re-flow stopper wall surrounds said set of plural selected regions completely.

19. The method as claimed in claim 1 , wherein said selected region comprises a set of plural selected regions separate from each other and adjacent to each other, and said re-flow stopper wall surrounds said set of plural selected regions incompletely.

20. The method as claimed in claim 1 , wherein said pattern is a pattern containing an organic material.

21. The method as claimed in claim 20 , wherein said pattern is a resist pattern.

22. A method of forming a re-flowed pattern over a layered-structure, said method comprising the steps of:

forming an original resist pattern over a layered-structure with an upper surface including at least one selected region and at least a re-flow stopper wall wherein extends outside said selected region and separate from said selected region, and said original resist pattern comprising a thicker portion and a thinner portion, and said thicker portion extending on a selected region,

patterning a layered-structure by use of said original resist pattern;

removing said thinner portion and reducing a thickness of said thicker portion to form a residual resist pattern unchanged in pattern shape from said thicker portion; and

causing a re-flow of said residual pattern, wherein a part of an outwardly re-flowed pattern is flowed into said re-flow stopper wall, and then an outward re-flow of said pattern is restricted by said re-flow stopper wall extending outside of said pattern, thereby to form a deformed pattern with at least an outside edge part defined by an outside edge of said re-flow stopper wall.

23. A method of patterning a layered-structure, said method comprising the steps of:

forming an original resist pattern over a layered-structure with an upper surface including at least one selected region and at least a re-flow stopper wall wherein extends outside said selected region and separate from said selected region, and said original resist pattern comprising a thicker portion and a thinner portion, and said thicker portion extending on a selected region,

patterning a layered-structure by use of said original resist pattern;

removing said thinner portion and reducing a thickness of said thicker portion to form a residual resist pattern unchanged in pattern shape from said thicker portion; and

causing a re-flow of said residual pattern, wherein a part of an outwardly re-flowed pattern is flowed into said re-flow stopper wall, and then an outward re-flow of said pattern is restricted by said re-flow stopper wall extending outside of said pattern, thereby to form a deformed pattern with at least an outside edge part defined by an outside edge of said re-flow stopper wall; and

patterning said layered-structure by use of said deformed pattern.