Electroabsorption modulator, modulator laser device and method for producing an electroabsorption modulator
View Patent ↗Electroabsorption modulator ( 100 ) having a layer sequence of at least five sequential layers, having at least one light absorption layer ( 106 ) which is arranged between the first layer ( 101 ) and the third layer ( 102 ) and is set up to generate charge carriers upon irradiation of light ( 108 ) of a specific wavelength, and having at least one storage layer ( 104 ) which is arranged between the third layer ( 102 ) and the fifth layer ( 103 ) and is set up to store charge carriers.
1. Electroabsorption modulator comprising:
a layer sequence of at least five layers, the layer sequence comprising sequentially a first layer with excess charge carriers of a first charge carrier type, a second layer without excess charge carriers, a third layer with excess charge carriers of a second charge carrier type, a fourth layer without excess charge carriers, and a fifth layer with excess charge carriers of the first charge carrier type;
at least one light absorption layer which is arranged between the first layer and the third layer and is set up to generate charge carriers upon irradiation of light of a specific wavelength;
at least one storage layer which is arranged between the third layer and the fifth layer and is set up to store charge carriers; and
at least one laterally extended insulating layer with a central opening incorporated in the first layer or the third layer or the fifth layer for limiting the current flow through the layer sequence and thus for defining an active modulator region in which laser light to be modulated overlaps with the active modulator region.
2. Electroabsorption modulator according to claim 1 , wherein the first layer, the third layer and the fifth layer of the layer sequence are appropriately doped to generate the respective excess charge carriers.
3. Electroabsorption modulator according to claim 1 , wherein the light absorption layer and the storage layer each have at least one at least one-dimensional quantum system.
4. Electroabsorption modulator according to claim 1 , wherein the first layer and the fifth layer are electrically coupled in each case to an electrode, and in which a current flow through the layer sequence is laterally bounded by the insulating layer.
5. Electroabsorption modulator according to claim 1 , wherein the insulating layer is sheathed by the third layer.
6. Electroabsorption modulator according to claim 1 , wherein the insulating layer is an oxidized part of the third layer.
7. Modulator laser device comprising:
a semiconductor laser; and
an electroabsorption modulator, said electroabsorption modulator comprising:
a layer sequence of at least five layers, the layer sequence comprising sequentially a first layer with excess charge carriers of a first charge carrier type, a second layer without excess charge carriers, a third layer with excess charge carriers of a second charge carrier type, a fourth layer without excess charge carriers, and a fifth layer with excess charge carriers of the first charge carrier type,
at least one light absorption layer which is arranged between the first layer and the third layer and is set up to generate charge carriers upon irradiation of light of a specific wavelength,
at least one storage layer which is arranged between the third layer and the fifth layer and is set up to store charge carriers, and
at least one laterally extending insulating layer with a central opening incorporated in the first layer or the third layer or the fifth layer for limiting the current flow through the layer sequence and thus for defining an active modulator region in which laser light to be modulated overlaps with the active modulator region, and
wherein the electroabsorption modulator and the semiconductor laser are arranged in such a way that the electroabsorption modulator can transmit or absorb light emitted by the semiconductor laser.
8. Modulator laser device according to claim 7 , wherein the electroabsorption modulator and the semiconductor laser have at least one common electrically conductive connecting layer which is set up in such a way that a common current flow is avoided both through the electroabsorption modulator and through the semiconductor laser.
9. Modulator laser device according to claim 7 , wherein the electroabsorption modulator and the semiconductor laser are monolithically integrated on a semiconductor substrate.
10. Modulator laser device according to claim 7 , wherein the semiconductor laser is a vertically emitting laser, and wherein the electroabsorption modulator and the semiconductor laser are arranged vertically one above another.
11. Modulator laser device according to claim 7 , wherein the semiconductor laser is an edge-emitting laser, and wherein the electroabsorption modulator and the semiconductor laser are arranged laterally next to one another.
12. Modulator laser device according to claim 7 , wherein the edge-emitting laser comprises a resonator based on Bragg structures.
13. Method for producing an electroabsorption modulator, said method comprising:
producing a layer sequence of at least five sequential layers on a substrate;
producing at least one laterally extended insulating layer with a central opening in the first layer or the third layer or the fifth layer for limiting the current flow through the layer sequence and thus for defining an active modulator region in which laser light to be modulated overlaps with the active modulator region,
introducing excess charge carriers of a first charge carrier type into the first layer and into the fifth layer of the layer sequence,
introducing excess charge carriers of a second charge carrier type into the third layer of the layer sequence,
introducing no excess charge carriers into the second layer and into the fourth layer of the layer sequence, and
electrically coupling both the first layer and the fifth layer of the layer sequence to at least one electric connection in order to form an electroabsorption modulator.