Laser thermal transfer donor including a separate dopant layer

1. A donor element adapted for use in making an OLED device, comprising:

a) a donor support element;

b) a light-absorbing layer disposed over the donor support element which, in response to light, produces heat;

c) a host material layer disposed over the light-absorbing layer; and

d) a dopant layer disposed over the host material layer such that when the donor element is placed in a transfer relationship with the OLED device and when light is absorbed by the light-absorbing layer, heat is produced that causes the vaporization transfer of host materials and dopant materials from the light-absorbing layer to cause at least partial mixing in the OLED device.

2. The donor element of claim 1 further including two or more host materials in the host material layer or in another layer.

3. The donor element of claim 1 wherein the dopant layer is disposed directly on the host material layer.

4. The donor element of claim 3 wherein the dopant layer has a thickness which is in a range of from 0.01% to 10% of the host material layer thickness.

5. A donor element adapted for use in making an OLED device, comprising:

a) a donor support element;

b) a light-absorbing layer disposed on the donor support element which, in response to light, produces heat;

c) one or more host material layers disposed on the light-absorbing layer; and

d) a dopant layer disposed on the host material layer such that when the donor element is placed in a transfer relationship with the OLED device and when light is absorbed by the light-absorbing layer, heat is produced that causes the vaporization transfer of host materials and dopant materials from the light-absorbing layer to cause at least partial mixing in the OLED device.

6. A method of using the donor element of claim 1 in the process of making an OLED device, comprising the steps of:

a) positioning the donor element in a transfer relationship with an OLED substrate and spaced from such OLED substrate by a gap; and

b) illuminating the donor element with light which is sufficient to cause enough heat to be formed such that dopant material and host material are respectively deposited on the substrate with the dopant material being mixed into the host material at the interface between the dopant and host materials.

7. The method of claim 6 wherein the light is provided by a laser source.

8. The method of claim 7 wherein the laser light is from an infrared laser.

9. The method of claim 6 further including providing a reduced pressure atmosphere in the gap between the donor element and the OLED substrate.

10. The method of claim 9 wherein the pressure is such that the mean free path is greater than the gap between the donor element and the substrate.

11. A method of using the donor element of claim 5 in the process of making an OLED device, comprising the steps of:

a) positioning the donor element in a transfer relationship with an OLED substrate and spaced from such OLED substrate by a gap; and

b) illuminating the donor element with light which is sufficient to cause enough heat to be formed such that dopant material and host material are respectively deposited on the substrate with the dopant material being mixed into the host material at the interface between the dopant and host materials.

12. The method of claim 11 wherein the light is provided by a laser source.

13. The method of claim 12 wherein the laser light is from an infrared laser.

14. The method of claim 11 further including providing a reduced pressure atmosphere in the gap between the donor element and the OLED substrate.

15. The method of claim 14 wherein the pressure is such that the mean free path is greater than the gap between the donor element and the substrate.