Orthogonal coupled transceiver
View Patent ↗The transceivers of the present invention use orthogonal coupling, i.e., perpendicular to the substrate, for a single fiber implementation of a transceiver incorporating both a VCSEL and a detector. The methods of the present invention include aligning and bonding a substrate wafer to a coupling wafer, prior to dicing the resultant compound wafer.
1. A compound wafer structure comprising:
a substrate wafer, said substrate wafer comprising:
a plurality of light sources; and
a plurality of detector structures; and
a coupling wafer bonded to said substrate wafer, said coupling wafer comprising;
a plurality of reflector structures;
a plurality of apertures formed in said coupling wafer; and
wherein at least one of said plurality of apertures is aligned with at least one of said plurality of reflector structures.
2. The compound wafer structure of claim 1 wherein said plurality of light sources comprises a plurality of approximately 1.3 μm VCSEL light sources.
3. The compound wafer structure of claim 1 wherein said plurality of light sources comprises a plurality of VCSEL light sources emitting light with wavelengths approximately in the O-band.
4. The compound wafer structure of claim 1 wherein said plurality of detector structures comprises a plurality of detector structures detecting wavelengths approximately in the C-band.
5. The compound wafer structure of claim 1 wherein said plurality of detector structures comprises a plurality of approximately 1.3 μm wavelength detector structures.
6. The compound wafer structure of claim 1 wherein said plurality of detector structures comprises a plurality of approximately 1.5 μm wavelength detector structures.
7. The compound wafer structure of claim 1 wherein said plurality of detector structures comprises a plurality of approximately 1.3 μm wavelength detector structures and a plurality of approximately 1.55 μm wavelength detector structures.
8. The compound wafer structure of claim 1 wherein:
at least one of said plurality of light sources is aligned with at least one of said plurality of reflector structures; and
at least one of said plurality of detector structures is aligned with at least one of said plurality of reflector structures.
9. A compound wafer structure comprising:
a substrate wafer, said substrate wafer comprising:
a plurality of approximately 1.3 μm VCSEL light sources;
a plurality of approximately 1.5 μm detector structures;
a plurality of backside electrical connections formed in said substrate wafer; and
at least one alignment structure formed in said substrate wafer;
a coupling wafer bonded to said substrate wafer, said coupling wafer comprising:
a plurality of apertures formed in said coupling wafer;
a plurality of reflector structures formed in said coupling wafer; and
at least one alignment structure formed in said coupling wafer;
wherein at least a portion of said plurality of apertures are aligned with at least a portion of said plurality of reflector structures;
wherein at least a portion of said plurality of light sources are aligned with at least a portion of said plurality of reflector structures; and
wherein at least a portion of said plurality of detector structures are aligned with at least a portion of said plurality of reflector structures.
10. The compound wafer structure of claim 9 further comprising a plurality of approximately 1.3 μm wavelength detector structures formed in said substrate wafer.
11. The compound wafer structure of claim 9 further comprising an anti-reflective coating on said substrate wafer.