CMOS image sensor array with black pixel using negative-tone resist support layer
View Patent ↗A “black” pixel for measuring dark current is produced using carbon-based or pigment-based black photosensitive resist deposited on a support layer that is formed using negative-tone photosensitive resist, both being formed over the light sensitive portion of the black pixel. After an array of pixels is fabricated, a negative-tone resist layer is deposited on the upper insulator formed over the pixels, and a region of the negative-tone resist located over the black pixel is exposed using a first mask. A carbon-based resist layer is deposited on the negative-tone resist layer, and a region of the carbon-based resist located over the black pixel is exposed using a second mask. The negative-tone and carbon-based resists are then developed to remove portions of the layers not located over the black pixel.
1. A method of producing image sensors comprising the steps of:
producing a plurality of pixels on a substrate including a first pixel located adjacent to a second pixel, each of the pixels including a light-sensitive region;
forming a non-carbon-based photosensitive resist support layer over the first and second pixels;
forming a carbon-based photosensitive resist layer on the support layer; and
removing portions of the support layer and the carbon-based photosensitive resist layer that are located over the second pixel such that a first portion of the support layer is positioned over the first pixel, and a second portion of the carbon-based photosensitive resist layer is positioned on the first portion.
2. The method according to claim 1 ,
wherein forming the support layer comprises depositing a negative-tone photosensitive resist layer over the first and second pixels, and then exposing the first portion of the negative-tone photosensitive resist layer through a first mask,
wherein forming the carbon-based photosensitive resist layer comprises exposing the second portion of the carbon-based photosensitive resist layer through a second mask, and
wherein removing portions of the support layer and the carbon-based photosensitive resist layer comprises developing unexposed portions of the negative-tone photosensitive resist layer and the carbon-based photosensitive resist layer, and then rinsing away the developed portions of the negative-tone photosensitive resist layer and the carbon-based photosensitive resist layer.
3. The method according to claim 2 ,
wherein exposing the first portion of the negative-tone photosensitive resist layer and exposing the second portion of the carbon-based photosensitive resist layer comprise utilizing a light source having an I-line wavelength or a G-line wavelength.
4. The method according to claim 3 ,
wherein exposing the first portion of the negative-tone photosensitive resist layer comprises applying an exposure dose of 150–700 mJ/cm 2 , and
wherein exposing the first portion of the negative-tone photosensitive resist layer comprises applying an exposure dose of 500–1200 mJ/cm 2 .
5. The method according to claim 2 ,
wherein depositing a negative-tone photosensitive resist layer comprises depositing a transparent photosensitive resist layer.
6. The method according to claim 1 ,
wherein forming the support layer comprises depositing a negative-tone photosensitive resist layer over the first and second pixels, and then exposing the first portion of the negative-tone photosensitive resist layer through a mask,
wherein forming the carbon-based photosensitive resist layer comprises exposing the second portion of the carbon-based photosensitive resist layer through the mask, and
wherein removing portions of the support layer and the carbon-based photosensitive resist layer comprises developing unexposed portions of the negative-tone photosensitive resist layer and the carbon-based photosensitive resist layer, and then rinsing away the developed portions of the negative-tone photosensitive resist layer and the carbon-based photosensitive resist layer.
7. The method according to claim 6 ,
wherein exposing the first portion of the negative-tone photosensitive resist layer and the second portion of the carbon-based photosensitive resist layer comprises utilizing a light source having an I-line wavelength or a G-line wavelength.
8. The method according to claim 7 ,
wherein exposing the first portion of the negative-tone photosensitive resist layer comprises applying an exposure dose of 150–700 mJ/cm 2 , and exposing the first portion of the negative-tone photosensitive resist layer comprises applying an exposure dose of 500–1200 mJ/cm 2 .
9. The method according to claim 7 ,
wherein depositing a negative-tone photosensitive resist layer comprises depositing a transparent photosensitive resist layer.
10. The method according to claim 1 , further comprising forming a color filter layer before the support layer.
11. A method for producing an image sensor comprising:
producing a plurality of pixels on a substrate including a first pixel located adjacent to a second pixel, each of the pixels including a light-sensitive region;
forming a negative-tone photosensitive resist layer over the first and second pixels;
forming a black photosensitive resist layer on the negative-tone photosensitive resist layer; and
removing portions of the negative-tone photosensitive resist layer and the black photosensitive resist layer that are located over the second pixel such that a support portion of the negative-tone photosensitive resist layer is positioned over the first pixel, and a light blocking portion of the black photosensitive resist layer is formed on the support portion.
12. The method according to claim 11 ,
wherein forming the negative-tone photosensitive resist layer comprises exposing the support portion of the negative-tone photosensitive resist layer through a mask,
wherein forming the black photosensitive resist layer comprises depositing a carbon-based photosensitive resist layer on the negative-tone photosensitive resist layer, and exposing the light blocking portion of the carbon-based photosensitive resist layer through the mask, and
wherein removing portions of the negative-tone photosensitive resist layer and the carbon-based photosensitive resist layer comprises developing unexposed portions of the negative-tone photosensitive resist layer and the carbon-based photosensitive resist layer, and then rinsing away the developed portions of the negative-tone photosensitive resist layer and the carbon-based photosensitive resist layer.
13. The method according to claim 12 ,
wherein exposing the support portion of the negative-tone photosensitive resist layer and exposing the light blocking portion of the carbon-based photosensitive resist layer comprise utilizing a light source having an I-line wavelength or a G-line wavelength.
14. The method according to claim 13 ,
wherein exposing the support portion of the negative-tone photosensitive resist layer comprises applying an exposure dose of 150–700 mJ/cm 2 , and
wherein exposing the light blocking portion of the negative-tone photosensitive resist layer comprises applying an exposure dose of 500–1200mJ/cm 2 .
15. The method according to claim 12 ,
wherein depositing a negative-tone photosensitive resist layer comprises depositing a transparent photosensitive resist layer.
16. The method according to claim 11 ,
wherein forming the negative-tone photosensitive resist layer comprises exposing the support portion of the negative-tone photosensitive resist layer through a mask,
wherein forming the black photosensitive resist layer comprises depositing a pigment-based photosensitive resist layer on the negative-tone photosensitive resist layer, and exposing the light blocking portion of the pigment-based photosensitive resist layer through the mask, and
wherein removing portions of the negative-tone photosensitive resist layer and the pigment-based photosensitive resist layer comprises developing unexposed portions of the negative-tone photosensitive resist layer and the pigment-based photosensitive resist layer, and then rinsing away the developed portions of the negative-tone photosensitive resist layer and the pigment-based photosensitive resist layer.