Semiconductor device and manufacturing method thereof
View Patent ↗A redundant fuse is provided with a redundant length, here a winding structure, at one end thereof, here at a vicinity of a second wire side to which a high voltage (Vcc) is impressed. A disconnected portion is provided between the other end side of the redundant fuse, here a second wire side which is on the ground potential (GND) and the winding structure.
1. A semiconductor device, comprising:
a transistor;
a wire structure including a wire and a fuse,
wherein said fuse is connected to said wire so as to form a connection, and has a redundant length for delaying corrosion,
wherein said redundant length is in a winding structure having a plurality of winding parts formed at a portion of said fuse between said connection to said wire and a disconnect portion; and,
wherein said winding structure has said plurality of winding parts in horizontal right and left directions of a same layer and vertical up and down directions between multiple layers respectively.
2. The semiconductor device according to claim 1 , wherein the winding structure is formed to be multilevel.
3. The semiconductor device according to claim 1 , wherein said redundant length is formed at a portion of said fuse, as a wider structure and/or a thicker film structure, relative to said wire.
4. The semiconductor device according to claim 1 , wherein said wire is made of a material containing at least copper.
5. The semiconductor device according to claim 1 , wherein said redundant length is provided between a disconnected portion of said fuse and a high voltage impressed side.
6. The semiconductor device according to claim 1 , wherein said redundant length is in a winding structure having a plurality of winding parts and said plurality of winding parts are located in series between the connection to the wire and the disconnection portion.
7. A semiconductor device, comprising:
a wire structure having a wire containing at least copper and a fuse,
wherein said fuse is connected to said wire, and is formed of a corrosion resistant material and a TiN film,
wherein the corrosion resistant material is polycrystalline silicon.
8. The semiconductor device according to claim 1 , wherein said winding structure is formed having a plurality of winding parts in both a plane-view direction and a side-view direction.