Electrostatic discharge protection device and method of manufacturing the same
View Patent ↗An electrostatic discharge protection device that includes a semiconductor substrate of a first dopant type, at least one source/drain pair of a second dopant type formed in the substrate, wherein the source/drain pair is separated to define a channel region therebetween, a lightly-doped region of the first dopant type defined between the source/drain pair and including at least a portion of the channel region, a gate dielectric layer formed over the substrate, and a gate formed over the gate dielectric layer and above the channel region.
1. An electrostatic discharge protection device, comprising:
a semiconductor substrate of a first dopant type;
at least one source/drain pair of a second dopant type formed in the substrate, wherein the source/drain pair is separated to define a channel region therebetween;
a lightly doped region of the first dopant type defined between the source/drain pair and including at least a portion of the channel region;
a gate dielectric layer formed over the substrate;
a gate formed over the gate dielectric layer and above the channels;
a lightly doped region of the second dopant type formed adjacent one of the source/drain pair and under the gate; and
a first diffused region formed under a drain region of the source/drain pair and extending into a portion of the lightly doped region of the second dopant type.
2. The device as claimed in claim 1 , further comprising a pocket region of the first dopant type formed adjacent one of the source/drain pair and under the gate.
3. The device as claimed in claim 1 , further comprising an anti-punchthrough region of the first dopant type formed under the channel region and extending between the source/drain pair.
4. The device as claimed in claim 1 , further comprising a second diffused region of the second dopant type formed under a source region of the source/drain pair.
5. The device as claimed in claim 1 , further comprising a third diffused region of the second dopant type formed under a drain region of the source/drain pair.
6. The device as claimed in claim 4 , wherein the second diffused region is formed under the source region and extends into a portion of the channel region.
7. The device as claimed in claim 5 , wherein the third diffused region is formed under the drain region and extends into a portion of the channel region.
8. The device as claimed in claim 1 , further comprising a fourth diffused region formed under a source region of the source/drain pair and extending into a portion of the lightly doped region of the second dopant type.
9. The device as claimed in claim 8 , further comprising a fifth diffused region of the second dopant type formed under the fourth diffused region.
10. The device as claimed in claim 1 , further comprising a sixth diffused region of the second dopant type formed under the first diffused region.
11. The device as claimed in claim 9 , wherein the fifth difused region extends into a portion of the channel region.
12. The device as claimed in claim 10 , wherein the sixth diffused region covers the entire first diffused region.
13. The device as claimed in claim 1 , further comprising a deep well region of the second dopant type formed in the substrate.