Microelectromechanical device using resistive electromechanical contact
View Patent ↗A microelectromechanical device that transmits an electric signal using mechanical contact between conductors is provided. The microelectromechanical device has a conductive oxide layer on at least one of contacting surfaces of the conductors. The conductor may be a signal line or a contact pad. According to the microelectromechanical device, the signal line or the contact pad is coated with the conductive oxide layer, thereby preventing the occurrence of micro-welding problem due to resistive heat. As a result, a reliability and a power handling of a microelectromechanical device can be improved.
1. A microelectromechanical device transmitting an electric signal using mechanical contact between conductors each having a body, the microelectromechanical device comprising a conductive oxide layer on at least one of contacting surfaces of the conductors, wherein the conductive oxide layer is formed of ruthenium oxide, iridium oxide, indium oxide, tin oxide, or zinc oxide and the body of each conductor is formed of a noble metal layer and coated with the conductive oxide layer.
2. The microelectromechanical device of claim 1 , wherein the conductive oxide layer is formed by a physical vapor deposition method such as a reactive magnetron sputtering method, or a chemical vapor deposition method such as metal organic chemical vapor deposition method.
3. A microelectromechanical device transmitting an electric signal using mechanical contact between conductors each having a body, wherein one of these conductors has a single conductive oxide layer, wherein the conductive oxide layer is formed of ruthenium oxide, iridium oxide, indium oxide, tin oxide, or zinc oxide, and the body of each conductor is formed of a noble metal layer and coated with the conductive oxide layer.
4. The microelectromechanical device of claim 3 , wherein the conductive oxide layer is formed by a physical vapor deposition method such as a reactive magnetron sputtering method, or a chemical vapor deposition method such as a metal organic chemical vapor deposition method.
5. A microelectromechanical device comprising:
a signal line formed on a substrate, the signal line whose input and output terminals are separated from each other at a predetermined gap;
a bottom electrode formed on the substrate while being separated from the signal line;
an anchor formed on the substrate while being separated from the bottom electrode;
a cantilever, one end of which is fixed to the anchor and the other end of which is suspended vertically to the bottom electrode, an open portion of the signal line and the substrate at a predetermined space;
a contact pad formed on the other end of the cantilever to face the open portion of the signal line; and
a top electrode formed on the cantilever;
wherein at least one of the signal line and the contact pad is coated with a conductive oxide layer, wherein the conductive oxide layer is formed of ruthenium oxide, iridium oxide, indium oxide, tin oxide, or zinc oxide, and the body of each of the signal line and the contact pad is formed of a noble metal layer and coated with the conductive oxide layer.
6. The microelectromechanical device of claim 5 , wherein the conductive oxide layer is formed by a physical vapor deposition method such a reactive magnetron sputtering method, or a chemical vapor deposition such as a metal organic chemical vapor deposition method.
7. A microelectromechanical device comprising:
a signal line formed on a substrate, the signal line whose input and output terminals are separated from each other;
a bottom electrode formed on the substrate while being separated from the signal line;
an anchor formed on the substrate while being separated from the bottom electrode;
a cantilever, one end of which is fixed to the anchor and the other end of which is suspended vertically to the bottom electrode, an open portion of the signal line, and the substrate;
a contact pad formed of a conductive oxide layer on the other end of the cantilever to face the open portion of the signal line; and
a top electrode formed on the cantilever, wherein the conductive oxide layer is formed of ruthenium oxide, iridium oxide, indium oxide, tin oxide, or zinc oxide, and the signal line is formed of a noble metal layer.
8. The microelectromechanical device of claim 7 , wherein the conductive oxide layer is formed by a physical vapor deposition method such as a reactive magnetron sputtering method, or a chemical vapor deposition such as a metal organic chemical vapor deposition method.
9. A microelectromechanical device transmitting an electric signal using mechanical contact between conductors each having a body, the microelectromechanical device comprising a conductive oxide layer on at least one of contacting surfaces of the conductors, wherein the body of each conductor is formed of a noble metal layer and coated with the conductive oxide layer.
10. The microelectromechanical device of claim 9 , wherein the conductive oxide layer is formed of ruthenium oxide, iridium oxide, indium oxide, tin oxide, zinc oxide, or indium tin oxide.
11. The microelectromechanical device of claim 9 , wherein the conductive oxide layer is formed by a physical vapor deposition method such as a reactive magnetron sputtering method, or a chemical vapor deposition method such as metal organic chemical vapor deposition method.
12. A microelectromechanical device transmitting an electric signal using mechanical contact between conductors each having a body, wherein one of these conductors has a single conductive oxide layer, wherein the body of each conductor is formed of a noble metal layer and coated with the conductive oxide layer.
13. The microelectromechanical device of claim 12 , wherein the conductive oxide layer is formed of ruthenium oxide, iridium oxide, indium oxide, tin oxide, zinc oxide, or indium tin oxide.
14. The microelectromechanical device of claim 12 , wherein the conductive oxide layer is formed by a physical vapor deposition method such as a reactive magnetron sputtering method, or a chemical vapor deposition method such as a metal organic chemical vapor deposition method.
15. A microelectromechanical device comprising:
a signal line formed on a substrate, the signal line whose input and output terminals are separated from each other at a predetermined gap;
a bottom electrode formed on the substrate while being separated from the signal line;
an anchor formed on the substrate while being separated from the bottom electrode;
a cantilever, one end of which is fixed to the anchor and the other end of which is suspended vertically to the bottom electrode, an open portion of the signal line and the substrate at a predetermined space;
a contact pad formed on the other end of the cantilever to face the open portion of the signal line; and
a top electrode formed on the cantilever;
wherein at least one of the signal line and the contact pad is coated with a conductive oxide layer, wherein the body of each of the signal line and the contact pad is formed of a noble metal layer and coated with the conductive oxide layer.
16. The microelectromechanical device of claim 15 , wherein the conductive oxide layer is formed of ruthenium oxide, iridium oxide, indium oxide, tin oxide, zinc oxide, or indium tin oxide.
17. The microelectromechanical device of claim 15 , wherein the conductive oxide layer is formed by a physical vapor deposition method such a reactive magnetron sputtering method, or a chemical vapor deposition such as a metal organic chemical vapor deposition method.
18. A microelectromechanical device comprising:
a signal line formed on a substrate, the signal line whose input and output terminals are separated from each other;
a bottom electrode formed on the substrate while being separated from the signal line;
an anchor formed on the substrate while being separated from the bottom electrode;
a cantilever, one end of which is fixed to the anchor and the other end of which is suspended vertically to the bottom electrode, an open portion of the signal line, and the substrate;
a contact pad formed of a conductive oxide layer on the other end of the cantilever to face the open portion of the signal line; and
a top electrode formed on the cantilever, wherein the signal line is formed of a noble metal layer.
19. The microelectromechanical device of claim 18 , wherein the conductive oxide layer is formed of ruthenium oxide, iridium oxide, indium oxide, tin oxide, zinc oxide, or indium tin oxide.
20. The microelectromechanical device of claim 18 , wherein the conductive oxide layer is formed by a physical vapor deposition method such as a reactive magnetron sputtering method, or a chemical vapor deposition such as a metal organic chemical vapor deposition method.