IP Library › Granted Patent US 7,189,305
Granted Patent B2
US 7,189,305 · App. 10/230,838 · Granted Mar 13, 2007

Gas-assist systems for applying and moving ozonated resist stripper to resist-bearing surfaces of substrates

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Quick Facts
Patent No.
US 7,189,305
App. No.
10/230,838
Granted
Mar 13, 2007
Kind
B2
Abstract

A method for moving resist stripper across the surface of a semiconductor substrate that includes applying a wet chemical resist stripper, such as an organic or oxidizing wet chemical resist stripper, to at least a portion of a photomask positioned over the semiconductor substrate. A carrier fluid, such as a gas, is then directed toward the semiconductor substrate so as to move the resist stripper across the substrate. The carrier fluid may be directed toward the substrate as the resist stripper is being applied thereto or following application of the resist stripper. A system for effecting the method is also disclosed.

Claims (55)

1. A system for removing resist from a semiconductor device structure, comprising:

a wafer support;

a source of resist stripper, the resist stripper including a gaseous component comprising ozone;

an applicator in communication with the source and configured to apply a quantity of the resist stripper toward the wafer support;

a source of a chemical that forms gas in the resist stripper, the chemical comprising hydrochloric acid; and

a chemical output element in communication with the source of the chemical, the chemical output element configured to direct the chemical toward the wafer support such that the resist stripper substantially continuously moves across a surface of a component on the wafer support.

2. The system of claim 1 , wherein the chemical forms the gas by reacting with a resist.

3. The system of claim 2 , wherein the chemical comprises hydrochloric acid.

4. The system of claim 3 , wherein hydrogen ions from the hydrochloric acid react with a product of a reaction between the ozone and the resist to form at least a portion of the gas.

5. The system of claim 4 , wherein the portion of the gas comprises carbon dioxide.

6. The system of claim 1 , wherein the chemical includes ions which react with a product of a reaction between the ozone and a resist to form at least a portion of the gas.

7. The system of claim 1 , wherein the gas comprises carbon dioxide.

8. The system of claim 1 , wherein the applicator is configured to spray the quantity of the resist stripper onto at least a portion of a semiconductor device structure positioned on the wafer support.

9. The system of claim 1 , wherein the applicator comprises a vessel containing the quantity of the resist stripper within which at least a portion of a surface of resist on a semiconductor device structure positioned on the wafer support is immersible.

10. The system of claim 1 , further comprising a support structure configured to orient the wafer support so that a semiconductor device structure thereon is oriented along a nonhorizontal plane.

11. The system of claim 1 , wherein the wafer support is configured to rotate a semiconductor device structure positioned thereon.

12. A system for removing resist from a semiconductor device structure, comprising:

a wafer support;

a source of resist stripper, the resist stripper including a gaseous component comprising ozone;

an applicator in communication with the source and configured to apply a quantity of the resist stripper toward the wafer support;

a source of a chemical that reacts with at least one of a resist and a product of a reaction between the resist and the ozone to form gas in the resist stripper; and

a chemical output element in communication with the source of the chemical, the chemical output element configured to direct the chemical toward the wafer support.

13. The system of claim 12 , wherein the chemical comprises hydrochloric acid.

14. The system of claim 12 , wherein at least a portion of the gas comprises carbon dioxide.

15. The system of claim 12 , wherein the applicator is configured to spray the quantity of the resist stripper onto at least a portion of a semiconductor device structure positioned on the wafer support.

16. The system of claim 12 , wherein the applicator comprises a vessel containing the quantity of the resist stripper within which at least a portion of a surface of resist on a semiconductor device structure positioned on the wafer support is immersible.

17. The system of claim 12 , further comprising a support structure configured to orient the wafer support so that a semiconductor device structure thereon is oriented along a nonhorizontal plane.

18. A system for removing resist from a semiconductor device structure, comprising:

a wafer support;

a source of resist stripper, the resist stripper including a gaseous component comprising ozone;

an applicator in communication with the source and configured to apply a quantity of the resist stripper toward the wafer support;

a source of a chemical that forms gas in the resist stripper, wherein the gas comprises carbon dioxide; and

a chemical output element in communication with the source of the chemical, the chemical output element configured to direct the chemical toward the wafer support such that the resist stripper substantially continuously moves across a surface of a component on the wafer support.

19. The system of claim 18 , wherein the applicator is configured to spray the quantity of the resist stripper onto at least a portion of a semiconductor device structure positioned on the wafer support.

20. The system of claim 18 , wherein the applicator comprises a vessel containing the quantity of the resist stripper within which at least a portion of a surface of resist on a semiconductor device structure positioned on the wafer support is immersible.

21. The system of claim 18 , further comprising a support structure configured to orient the wafer support so that a semiconductor device structure thereon is oriented along a nonhorizontal plane.

22. The system of claim 18 , wherein the wafer support is configured to rotate a semiconductor device structure positioned thereon.

23. A system for removing resist from a semiconductor device structure, comprising:

a wafer support;

a source of resist stripper, the resist stripper including a gaseous component comprising ozone;

an applicator in communication with the source and configured to apply a quantity of the resist stripper toward the wafer support, wherein the applicator comprises a vessel containing the quantity of the resist stripper within which at least a portion of a surface of resist on a semiconductor device structure positioned on the wafer support is immersible;

a source of a chemical that forms gas in the resist stripper; and

a chemical output element in communication with the source of the chemical, the chemical output element configured to direct the chemical toward the wafer support such that the resist stripper substantially continuously moves across a surface of a component on the wafer support.

24. The system of claim 18 , wherein the applicator is configured to spray the quantity of the resist stripper onto at least a portion of a semiconductor device structure positioned on the wafer support.

25. The system of claim 18 , further comprising a support structure configured to orient the wafer support so that a semiconductor device structure thereon is oriented along a nonhorizontal plane.

26. The system of claim 18 , wherein the wafer support is configured to rotate a semiconductor device structure positioned thereon.

27. A system for removing resist from a semiconductor device structure, comprising:

a wafer support;

a source of resist stripper, the resist stripper including a gaseous component comprising ozone;

an applicator in communication with the source and configured to apply a quantity of the resist stripper toward the wafer support;

a source of a chemical that forms gas in the resist stripper;

a chemical output element in communication with the source of the chemical, the chemical output element configured to direct the chemical toward the wafer support such that the resist stripper substantially continuously moves across a surface of a component on the wafer support; and

a support structure configured to orient the wafer support so that a semiconductor device structure thereon is oriented along a nonhorizontal plane.

28. The system of claim 27 , wherein the applicator is configured to spray the quantity of the resist stripper onto at least a portion of a semiconductor device structure positioned on the wafer support.

29. The system of claim 18 , wherein the wafer support is configured to rotate a semiconductor device structure positioned thereon.