Method and apparatus for cleaning a web-based chemical mechanical planarization system
A method and apparatus for cleaning a web-based chemical-mechanical planarization (CMP) system. Specifically, a fluid spray bar is coupled to a frame assembly which may be mounted on a CMP system. The fluid spray bar will move along the frame assembly. As the fluid spray bar traverses the length of the frame assembly, a cleaning fluid is sprayed onto the web in order to clean the web between planarization cycles.
1. A method of planarizing a semiconductor wafer comprising:
(a) depositing a chemical slurry onto a polishing web;
(b) polishing the semiconductor wafer by mechanically moving the wafer into contact with the polishing web and chemical slurry for a period of time;
(c) removing the wafer from the polishing web; and
(d) spraying fluid on the web by moving a fluid spray bar to traverse a portion of the polishing web.
2. The method, as set forth in claim 1 , wherein the acts are performed in the recited order.
3. The method, as set forth in claim 1 , wherein act (a) comprises the act of depositing a chemical slurry comprising abrasive particles and chemicals.
4. The method, as set forth in claim 1 , wherein act (a) comprises the act of depositing a chemical slurry comprising a non-abrasive chemical solution.
5. The method, as set forth in claim 1 , wherein act (a) comprises the act of depositing the chemical slurry onto the polishing web by the wafer carrier.
6. The method, as set forth in claim 1 , wherein act (b) comprises the act of coupling the semiconductor wafer to a wafer carrier on a rotating device.
7. The method, as set forth in claim 1 , wherein act (b) comprises the act of polishing the wafer using a non-abrasive polishing pad.
8. The method, as set forth in claim 1 , wherein act (b) comprises the act of polishing the wafer using a fixed-abrasive polishing pad.
9. The method, as set forth in claim 1 , wherein act (c) comprises the act of mechanically moving the wafer out of contact with the polishing web.
10. The method, as set forth in claim 1 , wherein act (d) comprises the act of spraying a web-cleaning fluid onto the web.
11. The method, as set forth in claim 1 , wherein act (d) comprises the act of spraying a web-cleaning fluid onto the web to remove wafer debris and chemical slurry from the web.
12. The method, as set forth in claim 1 , wherein act (d) comprises the act of spraying a corrosion inhibitor onto the wafer.
13. The method, as set forth in claim 1 , wherein act (d) further comprises the act of moving a fluid spray bar to traverse a portion of the polishing web.
14. The method, as set forth in claim 1 , wherein act (d) comprises the act of depositing the web cleaning fluid by the fluid spray bar as the fluid spray bar moves in a first direction.
15. The method, as set forth in claim 1 , wherein act (d) comprises the act of depositing a cleaning fluid as the fluid spray bar moves in a first direction, and depositing a chemical slurry as the fluid spray bar moves in a second direction, opposite the first.
16. The method, as set forth in claim 1 , wherein act (d) comprises the act of depositing the cleaning fluid at an angle in a range of 10° and 30° relative to the web by the fluid spray bar as it moves in a first direction.
17. The method, as set forth in claim 16 , further comprising the act of removing excess cleaning fluid as the fluid spray bar moves in a second direction, opposite the first.
18. The method, as set forth in claim 17 , further comprising the act of squeegeeing the excess cleaning fluid from the polishing web, as the fluid spray bar moves in the second direction.
19. The method, as set forth in claim 17 , further comprising the act of blowing the excess cleaning fluid from the polishing web, as the fluid spray bar moves in the second direction.
20. A method of planarizing a semiconductor wafer comprising:
(a) depositing a chemical slurry onto a polishing web;
(b) polishing the semiconductor wafer by mechanically moving the wafer into contact with the polishing web and chemical slurry for a period of time;
(c) removing the wafer from the polishing web; and
(d) spraying a web-cleaning fluid from a fluid spray bar onto the web to remove wafer debris and chemical slurry from the polishing web by moving the fluid spray par to traverse a portion of the polishing web.
21. The method, as set forth in claim 20 , wherein the acts are performed in the recited order.
22. The method, as set forth in claim 20 , wherein act (a) comprises the act of depositing a chemical slurry comprising abrasive particles and chemicals.
23. The method, as set forth in claim 20 , wherein act (a) comprises the act of depositing a chemical slurry comprising a non-abrasive chemical solution.
24. The method, as set forth in claim 20 , wherein act (a) comprises the act of depositing the chemical slurry onto the polishing web by the wafer carrier.
25. The method, as set forth in claim 20 , wherein act (b) comprises the act of coupling the semiconductor wafer to a wafer carrier on a rotating device.
26. The method, as set forth in claim 20 , wherein act (b) comprises the act of polishing the wafer using a non-abrasive polishing pad.
27. The method, as set forth in claim 20 , wherein act (b) comprises the act of polishing the wafer using a fixed-abrasive polishing pad.
28. The method, as set forth in claim 20 , wherein act (c) comprises the act of mechanically moving the wafer out of contact with the polishing web.
29. The method, as set forth in claim 20 , wherein act (d) comprises the act of spraying a corrosion inhibitor onto the wafer.
30. The method, as set forth in claim 20 , wherein act (d) comprises the act of depositing the web cleaning fluid by the fluid spray bar as the fluid spray bar moves in a first direction.
31. The method, as set forth in claim 20 , wherein act (d) comprises the act of depositing a cleaning fluid as the fluid spray bar moves in a first direction, and depositing a chemical slurry as the fluid spray bar moves in a second direction, opposite the first.
32. The method, as set forth in claim 20 , wherein act (d) comprises the act of depositing the cleaning fluid at an angle in a range of 10° and 30° relative to the web by the fluid spray bar as it moves in a first direction.
33. The method, as set forth in claim 32 , further comprising the act of removing excess cleaning fluid as the fluid spray bar moves in a second direction, opposite the first.
34. The method, as set forth in claim 33 , further comprising the act of squeegeeing the excess cleaning fluid from the polishing web, as the fluid spray bar moves in the second direction.
35. The method, as set forth in claim 33 , further comprising the act of blowing the excess cleaning fluid from the polishing web, as the fluid spray bar moves in the second direction.