Information storage apparatus using semiconductor probe
View Patent ↗An information storage apparatus includes a recording medium and a head. The recording medium has an electrode layer, a ferroelectric film that is stacked on the electrode layer, and a semiconductor layer that is stacked on the ferroelectric film. The head has a semiconductor probe for forming a dielectric polarization on the ferroelectric film to record information and reproducing information from the dielectric polarizations on the ferroelectric film by making a p-n junction with the recording medium. Thus, it is possible to manufacture a small-sized information storage apparatus which is capable of repeatedly recording and reproducing information at a high speed.
1. An information storage apparatus using a semiconductor probe, the information storage apparatus comprising:
a recording medium having an electrode layer, a ferroelectric film that is stacked on the electrode layer, and a semiconductor layer that is stacked on the ferroelectric film; and
a head having a semiconductor probe for forming a dielectric polarization on the ferroelectric film to record information and reproducing information from the dielectric polarizations on the ferroelectric film by making a p-n junction with the recording medium.
2. The information storage apparatus of claim 1 , wherein the semiconductor probe is an n-type semiconductor if the semiconductor layer of the recording medium is a p-type semiconductor.
3. The information storage apparatus of claim 2 , wherein the semiconductor probe records information in a state that the semiconductor probe does not contact the recording medium.
4. The information storage apparatus of claim 2 , wherein the semiconductor probe records information in a state that the semiconductor probe contacts the recording medium.
5. The information storage apparatus of claim 2 , wherein the semiconductor probe reproduces information in a state that the semiconductor probe contacts the recording medium.
6. The information storage apparatus of claim 1 , wherein the semiconductor probe is a p-type semiconductor if the semiconductor layer of the recording medium is an n-type semiconductor.
7. The information storage apparatus of claim 6 , wherein the semiconductor probe records information in a state that the semiconductor probe does not contact the recording medium.
8. The information storage apparatus of claim 6 , wherein the semiconductor probe records information in a state that the semiconductor probe contacts the recording medium.
9. The information storage apparatus of claim 6 , wherein the semiconductor probe reproduces information in a state that the semiconductor probe contacts the recording medium.
10. The information storage apparatus of claim 1 , wherein the semiconductor probe records information in a state the semiconductor probe does not contact the recording medium.
11. The information storage apparatus of claim 1 , wherein the semiconductor probe records information in a state that the semiconductor probe contacts the recording medium.
12. The information storage apparatus of claim 1 , wherein the semiconductor probe reproduces information in a state that the semiconductor probe contacts the recording medium.
13. The information storage apparatus of claim 1 , wherein the semiconductor probe has a radius of 50 nm or less.
14. The information storage apparatus of claim 1 , wherein the semiconductor probe is one of a conic probe, a pyramidic probe, and a cylindrical probe.
15. The information storage apparatus of claim 1 , wherein contact resistance between the semiconductor layer and the semiconductor probe varies based on polarity of the ferroelectric film.
16. The information storage apparatus of claim 1 , wherein the head further comprises a cantilever for supporting the semiconductor probe.
17. The information storage apparatus of claim 1 , wherein the ferroelectric film has a dielectric polarization of 10 μC/cm 2 or more.