Nitrogen sources for molecular beam epitaxy
View Patent ↗MBE nitrogen sources of dimethylhydrazine, tertiarybutlyhydrazine, nitrogentrifloride, and NHx radicals. Those nitrogen sources are beneficial in forming nitrogen-containing materials on crystalline subtrates using MBE. Semiconductor lasers in general, and VCSEL in particular, that have nitrogen-containing layers can be formed using such nitrogen sources.
1. A method of performing molecular beam epitaxy, comprising:
locating a crystalline substrate in a chamber;
heating the crystalline substrate to a temperature suitable for MBE epitaxial growth;
evacuating the chamber to a pressure suitable for MBE epitaxial growth; and
injecting tertiarybutylhydrazine into the chamber and onto a surface of the crystalline substrate.
2. A method according to claim 1 , wherein a nitrogen-containing layer is formed on the crystalline substrate.
3. A method according to claim 1 , wherein the injected material is injected from an effusion cell.
4. A method according to claim 1 , wherein the injected material forms a gaseous beam.
5. A method according to claim 1 , wherein a nitrogen-containing layer is formed on a surface of the crystalline substrate.
6. A method according to claim 1 , wherein a surplus of hydrogen is directed onto the surface of the crystalline substrate.
7. A method according to claim 6 , wherein the hydrogen surplus acts as a surfactant on the surface of the crystalline substrate.
8. A method of fabricating a vertical cavity surface emitting laser comprising the steps of:
locating a crystalline substrate in a chamber;
heating the crystalline substrate to a temperature suitable for MBE epitaxial growth;
evacuating the chamber to a pressure suitable for MBE epitaxial growth; and
injecting tertiarybutylhydrazine into the chamber and onto a surface of the crystalline substrate.
9. A method according to claim 8 , wherein a nitrogen-containing layer is formed on a surface of the crystalline substrate.
10. A method according to claim 8 , wherein a surplus of hydrogen is directed onto the surface of the crystalline substrate.
11. A method according to claim 10 , wherein the hydrogen surplus acts as a surfactant on the surface of the crystalline substrate.
12. A method according to claim 11 , wherein the injected material is a plasma having nitrogen and hydrogen.
13. A method according to claim 8 , wherein the injected material is injected from an effusion cell.
14. A method according to claim 13 , wherein the injected material forms a gaseous beam.
15. A method of fabricating a semiconductor laser, comprising the steps of:
locating a crystalline substrate in a chamber;
heating the crystalline substrate to a temperature suitable for MBE epitaxial growth;
evacuating the chamber to a pressure suitable for MBE epitaxial growth;
growing at least one semiconductor layer on the crystalline substrate; and
injecting tertiarybutylhydrazine into the chamber and onto a surface of the crystalline substrate.
16. A method according to claim 15 , wherein injecting a material forms a nitrogen-containing layer on the crystalline substrate.
17. A method according to claim 16 , wherein the injected material is injected from an effusion cell.
18. A method according to claim 15 , wherein the injecting the material forms a gaseous beam.
19. A method according to claim 15 , further including completing the fabrication of a semiconductor laser.