IP Library › Patent Application 10236943
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App. No. 10/236,943 · Confirmation No. 3874

GaN substrate formed over GaN layer having discretely formed minute holes produced by use of discretely arranged growth suppression mask elements

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Quick Facts
App. No.
10/236,943
Filed
2002-09-09
Pub. No.
US20030047746A1
Examiner
TRAN, TAN N
Art Unit
2826