Semiconductor device comprising multiple layers with trenches formed on a semiconductor substrate
View Patent ↗A method of manufacturing a semiconductor device substrate is disclosed, which comprises forming a mask layer patterned on a semiconductor layer insulated from a surface of a semiconductor substrate by an electrically insulating layer, etching the semiconductor layer according to the pattern of the mask layer to form a trench leading to the insulating layer, etching a protective layer deposited thinner on the semiconductor substrate than the thickness of the insulating layer to form a sidewall protective film which covers a side surface of the trench, etching the insulating layer from a bottom surface of the trench to the semiconductor substrate; and growing a single-crystalline layer from the surface of the semiconductor substrate exposed as a result of etching the insulating layer.
1. A substrate for a semiconductor device comprising:
a semiconductor substrate;
an insulating region where an electrically insulating layer and a semiconductor layer insulated by said insulating layer are formed on a surface of the semiconductor substrate; and
a non-insulating region where a single-crystalline layer is formed on said surface of the semiconductor substrate; wherein:
a first protective film covers a side surface of said semiconductor layer, and
a second protective film is formed in a boundary region between said insulating region and said non-insulating region, said second protective film covering a side surface of at least said first protective film, a portion of said single-crystalline layer extending between a portion of said second protective film and a portion of said surface of said substrate, said second protective film being insulative.
2. The substrate for a semiconductor device according to claim 1 , wherein said second protective film is thinner when measured from the side surface of said first protective film than said insulating layer when measured from said semiconductor substrate.
3. The substrate for a semiconductor device according to claim 2 , wherein, of the side surface portions of said insulating layer, a side surface portion closest to said semiconductor layer is closer to said insulating region than the side surface of said semiconductor layer.
4. The substrate for a semiconductor device according to claim 1 , wherein a portion of a side surface of said insulating layer, said portion being adjacent to said semiconductor substrate, is in the boundary region between the insulating region and the non-insulating region.
5. The substrate for a semiconductor device according to claim 4 , wherein the portion of the side surface of said insulating layer closest to said semiconductor substrate does not reach a boundary between the boundary region and the non-insulating region.