Process of direct growth of carbon nanotubes on a substrate at low temperature
View Patent ↗Carbon nanotubes are directly grown on a substrate surface having three metal layers thereon by a thermal chemical vapor deposition at low-temperature, which can be used as an electron emission source for field emission displays. The three layers include a layer of an active metal catalyst sandwiched between a thick metal support layer formed on the substrate and a bonding metal layer. The active metal catalyst is iron, cobalt, nickel or an alloy thereof; the metal support and the bonding metal independently are Au, Ag, Cu, Pd, Pt or an alloy thereof; and they can be formed by sputtering, chemical vapor deposition, physical vapor deposition, screen printing or electroplating.
1. A process of direct low-temperature growth of carbon nanotubes on a substrate, which comprises the following steps:
a) forming a metal support layer on a substrate;
b) forming a metal catalyst layer on said metal support layer;
c) forming a bonding metal layer on said catalyst metal layer; and
d) growing carbon nanotubes on a surface of said substrate having said metal support layer, the metal catalyst layer and the bonding metal layer thereon by using a carbon source gas through a thermal chemical vapor deposition (CVD);
wherein said metal support layer and said bonding metal layer separately have a thickness of 0.1-50 microns, and the former is thicker than the later;
said metal support layer comprises a noble metal;
said bonding metal layer comprises a noble metal; and
said metal catalyst layer comprises a metal selected from the group consisting of Fe, Co, Ni, and an alloy thereof.
2. The process as claimed in claim 1 , wherein said metal support layer in Step (a) is formed by vacuum sputtering, CVD, physical vapor deposition (PVD), screen printing or electroplating.
3. The process as claimed in claim 2 , wherein said metal support layer in Step (a) is formed by using said screen printing to coat a paste on said substrate, said paste being dispersed with particles of the noble metal having a particle size of 0.1-10 microns; and sintering the obtained coating layer.
4. The process as claimed in claim 1 , wherein said metal catalyst layer in Step (b) is formed by vacuum sputtering, CVD, physical vapor deposition (PVD), screen printing or electroplating.
5. The process as claimed in claim 4 , wherein said metal catalyst layer in Step (b) is formed by said electroplating.
6. The process as claimed in claim 1 , wherein said bonding metal bonding layer in Step (c) is formed by vacuum sputtering, CVD, physical vapor deposition (PVD), screen printing or electroplating.
7. The process as claimed in claim 1 , wherein said bonding metal layer in Step (c) is formed by coating a paste solution on said metal catalyst layer, said paste solution being dispersed with particles of the noble metal having a particle size of 0.1-10 microns; and drying the obtained coating layer.
8. The process as claimed in claim 1 , wherein said metal support layer comprises silver, gold, Pt, Pd, or Cu.
9. The process as claimed in claim 8 , wherein said metal support layer comprises silver.
10. The process as claimed in claim 8 , wherein said metal catalyst layer comprises nickel.
11. The process as claimed in claim 1 , wherein said metal support layer and said bonding metal layer comprise a same noble metal.
12. The process as claimed in claim 1 , wherein said thermal CVD in Step (d) is carried out under conditions of: a reaction temperature of 400-600° C., a pressure of 0.5-2 atm, and a reaction time of 1-120 minutes; said carbon source gas comprises a hydrocarbon or carbon monoxide.