IP Library Granted Patent US 6,974,714
Granted Patent B2
US 6,974,714 · App. 10/238,652 · Granted Dec 13, 2005

Process for making light waveguide element

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 6,974,714
App. No.
10/238,652
Granted
Dec 13, 2005
Kind
B2
Abstract

A process for making a light waveguide element is made by forming only an upper clad layer ( 40 ) and a core layer ( 32 ) without etching an optical axis height-adjusting sections. By using plasma chemical vapor deposition (CVD) which is good at controlling the film thickness, it is possible to provide without difficulty a light waveguide element with a height-adjusting section that has a precise film thickness, making it possible to provide precise optical axis vertical alignment upon mounting. By forming alignment markers in the same photolithography as that of the core formation, it is possible to provide precise horizontal optical axis alignment.

Claims (13)

1. A process for making a light waveguide element mounted on a mount board along with an optical fiber and photoelectric components, comprises:

forming a core as a light path on a substrate serving as a lower clad layer; and

forming a T-shaped upper clad layer having a central section elevated from optical axis height-adjusting side sections to cover said core, wherein said T-shaped upper clad layer-forming step comprises:

patterning, subsequent to said core-forming step, an etching stopper film on opposite sides of said core including an area of said optical axis height-adjusting side sections;

forming a first upper clad layer over an entire surface including said etching stopper film, said core, and said substrate;

forming an etching mask on said first upper clad layer so as to cover an area above said core;

etching off a portion of said first upper clad layer that is other than said area covered by said etching mask until said etching stopper film is exposed;

removing said etching stopper film and said etching mask; and

forming a second upper clad layer over an entire surface including said first upper clad layer and said substrate.

2. The process according to claim 1 , wherein said T-shaped upper clad layer is made sufficiently thick to provide light propagation characteristics.

3. The process according to claim 2 , wherein said T-shaped upper clad layer is made 15 μm thick or more.

4. The process according to claim 1 , wherein said optical axis height-adjusting side sections are made so as to have a thickness from said lower clad layer equal to a sum of a half of a thickness of said core and an optical axis height of said optical fiber and said photoelectric components.

5. The process according to claim 1 , wherein said core and said upper clad layer are made by plasma chemical vapor deposition.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 23, 2023
From: NEOPHOTONICS SEMICONDUCTOR GK
To: NEOPHOTONICS CORPORATION
Reel/Frame 063148/0468 →
CHANGE OF NAME Recorded Oct 22, 2013
From: OKI SEMICONDUCTOR CO., LTD.
To: LAPIS SEMICONDUCTOR CO., LTD.
Reel/Frame 031627/0671 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 20, 2013
From: LAPIS SEMICONDUCTOR CO., LTD.
To: NEOPHOTONICS SEMICONDUCTOR GK
Reel/Frame 031040/0194 →