Semiconductor polymers, method for the production thereof and an optoelectronic component
View Patent ↗Layered germanium polymers that are semiconductive and demonstrate a strong red or infrared luminescence are produced through the topochemical conversion of calcium digermanide. Furthermore, silicon/germanium layer polymers can also be produced in this manner. These layer polymers can be produced epitaxially on substrates comprising crystalline germanium, and can be used to construct light-emitting optoelectronic components such as light-emitting diodes or lasers.
1. A light emitting polymer material forming a crystal lattice, comprising:
germanium or germanium-silicon polymers; wherein
germanium atoms of the germanium polymers form surface planes of the crystal lattice or silicon atoms and germanium atoms of the germanium-silicon polymers form mixed surface planes of the crystal lattice, and said germanium or germanium-silicon polymers are layered on one another to form the crystal lattice; and
the light emitting polymer material is capable of luminescing.
2. The light emitting polymer material according to claim 1 , wherein a molecular formula of the germanium polymer is (GeH) n .
3. The light emitting polymer material according to claim 1 , wherein univalent groups are bound to at least a portion of the germanium atoms.
4. The light emitting polymer material according to claim 1 , wherein univalent groups are bound to at least a portion of the silicon atoms and/or the germanium atoms.
5. The light emitting polymer material according to claim 4 , wherein the univalent groups are halogen atoms, OH groups, NH 2 groups, CH 3 groups, or alkanes.
6. The light emitting polymer material according to claim 1 , wherein the distance between the surface planes is between 5 Å and 60 Å.
7. The light emitting polymer material according to claim 1 , wherein the surface planes are separated from one another by intermediate surface planes.
8. The light emitting polymer material according to claim 7 , wherein the intermediate surface planes are (Ca(OH) 2 ) n planes.
9. The light emitting polymer material according to one of claims 1 , 4 , 5 , 7 , or 8 , wherein the light emitting polymer material demonstrates a luminescence with a maximum intensity at a wavelength between 400 nm and 1600 nm.
10. A light emitting polymer material structure, comprising a sequence of different layers of polymers, wherein the sequence of different layers includes at least one layer polymer according to claim 1 .
11. A method for producing a light emitting polymer material according to claim 1 , wherein the polymer material is produced by means of a topochemical conversion of Ca(Si 1-x Ge x ) 2 , 0<x≦1.
12. The method according to claim 11 , wherein an epitaxial Ca(Si 1-x Ge x ) 2 layer, 0<x≦1, on a substrate comprising crystalline germanium or silicon/germanium is used for the production of the polymer material.
13. The method according to claim 12 , wherein the epitaxial Ca(Si 1-x Ge x ) 2 layer 0<x≦1, is produced through deposition of Ca onto a Si 1-x Ge x substrate, 0<x≦1, with subsequent tempering, through deposition of Ca onto a heated Si 1-x Ge x substrate, 0<x≦1, though co-deposition of Ca, Ge, and Si onto a substrate with subsequent tempering, or through co-deposition of Ca, Ge, and Si onto a heated substrate.
14. The method according to claim 11 , wherein the topochemical conversion is carried out with a fluid that contains HCl or H 2 O.
15. The method according to claim 11 , wherein the topochemical conversion is carried out in air with a relative humidity of 10 to 100%.
16. An optoelectronic component, comprising:
a crystalline substrate; and
a layered polymer material containing semiconductor atoms, the semiconductor atoms disposed in surface plane structures layered on top of one another, wherein the layered polymer material is produced by means of a topochemical conversion of Ca(Si 1-x Ge x ) 2 , 0<x≦1 on the crystalline substrate;
the polymer material having an epitaxial orientation to the substrate.
17. The optoelectronic component according to claim 16 , wherein the layered polymer material is luminescent.
18. The optoelectronic component according to claim 16 , wherein the layered polymer material comprises:
a plurality of germanium or germanium-silicon polymers;
wherein germanium atoms of the germanium polymers form surface planes of a crystal lattice or silicon atoms and germanium atoms of the germanium-silicon polymers form mixed surface planes of a crystal lattice, and said germanium or germanium-silicon polymers are layered on one another to form the crystal lattice.
19. The optoelectronic component according to claim 16 , wherein the crystalline substrate is a germanium substrate or a germanium/silicon substrate.
20. The optoelectronic component according to claim 16 , wherein the substrate is oriented such that a surface plane structure of the layered polymer material is not oriented parallel to the surface of the substrate.
21. The optoelectronic component according to claim 20 , wherein the substrate has a (110) surface.
22. The optoelectronic component according to claim 16 , wherein the substrate is doped.
23. The optoelectronic component according to claim 16 , wherein an electrical contact is disposed on the layered polymer material.
24. The optoelectronic component according to claim 23 , wherein the electrical contact comprises a metal or an electrically conductive oxide.
25. The optoelectronic component according to claim 23 , wherein the contact is translucent.
26. The optoelectronic component according to claim 23 , wherein the contact contains Sr, Ca, Mg, Al, Zn, In, ZnO, InO, or InZnO.
27. The optoelectronic component according to claim 16 , wherein the layered polymer material is doped in its entirety, or with spatial selectivity.
28. The optoelectronic component according to claim 27 , wherein doping is carried out by means of intercalated alkali or earth alkali atoms.
29. The optoelectronic component according to claim 16 , wherein the optoelectronic component is a light-emitting diode or a laser diode.
30. The optoelectronic component according to claim 16 , wherein the optoelectronic component serves to detect optical radiation.
31. The optoelectronic component according to claim 16 , wherein the surface planes are separated from one another by intermediate surface planes.
32. The optoelectronic component according to claim 31 , wherein the intermediate surface planes are (Ca(OH) 2 ) n planes.