Stacked switchable element and diode combination
View Patent ↗A device ( 10 ) comprises a semiconductor diode ( 12 ) and a switchable element ( 14 ) positioned in stacked adjacent relationship so that the semiconductor diode ( 12 ) and the switchable element ( 14 ) are electrically connected in series with one another. The switchable element ( 14 ) is switchable from a low-conductance state to a high-conductance state in response to the application of a forming voltage to the switchable element ( 14 ).
1. A device comprising a semiconductor diode and a switchable element positioned in stacked adjacent relationship with a stop layer that allows flow of electric current positioned between said semiconductor diode and said switchable element so that said semiconductor diode, said stop layer, and said switchable element are in stacked adjacent contact with one another, and so that said semiconductor diode and said switchable element are electrically connected in series with one another, said switchable element being switchable from a low-conductance state to a high-conductance state in response to the application of a forming current.
2. The device of claim 1 , wherein said switchable element comprises an intermediate layer and a metallic layer, said intermediate layer being in stacked adjacent contact with said metallic layer.
3. The device of claim 2 , wherein said intermediate layer comprises p-type amorphous silicon.
4. The device of claim 2 , wherein said intermediate layer comprises intrinsic-type amorphous silicon.
5. The device of claim 2 , wherein said metallic layer is Ag, Cr, or V.
6. The device of claim 1 , wherein said stop layer comprises n-type amorphous silicon.
7. The device of claim 1 , wherein said stop layer comprises a metal.
8. The device of claim 7 , wherein said metal stop layer is Cr.
9. The device of claim 1 , further comprising a contact in adjacent contact with said semiconductor diode.
10. The device of claim 9 , wherein said contact comprises a metal.
11. The device of claim 10 , wherein said metal contact comprises stainless steel.
12. The device of claim 1 , wherein said semiconductor diode comprises an amorphous silicon structure.
13. The device of claim 1 , wherein said semiconductor diode comprises a microcrystalline silicon structure.
14. A device comprising:
a semiconductor diode device;
a switchable element in electrical series connection with the semiconductor diode; and
a stop layer positioned between said semiconductor diode device and said switchable element, the arrangement being such that said semiconductor diode device, said stop layer, and said switchable element are positioned in stacked adjacent relationship, said switchable element being switchable from a low-conductance state to a high-conductance state in response to the application of a forming current that flows through the semiconductor diode device, stop layer, and switchable element.
15. The device of claim 14 , wherein said switchable element comprises an intermediate layer and a metallic layer, said intermediate layer being in stacked adjacent contact with said metallic layer.
16. The device of claim 15 , wherein said stop layer comprises n-type amorphous silicon.
17. The device of claim 15 , wherein said stop layer comprises a metal.
18. The device of claim 17 , wherein said metal stop layer is Cr.
19. A method of forming a device, comprising
forming a diode device from semiconducting material;
forming an intermediate layer in stacked adjacent relationship with said diode device; and
depositing a metallic layer on said intermediate layer, said intermediate layer and said metallic layer forming a switchable element, said switchable element being switchable from a low-conductance state to a high-conductance state in response to the application of a forming voltage to said switchable element, said switchable element being in electrical series with said diode device.