Semiconductor light emitting element and semiconductor light emitting device
A gallium nitride compound semiconductor light emitting element has a nitride layered body formed on a translucent substrate. A P type pad electrode, an N type pad electrode and a P type electrode are formed at the layered body, each having the desired reflectance. The thickness of the translucent substrate and the nitride layered body stacked thereon of the semiconductor light emitting element is 60 μm to 460 μm.
1. A semiconductor light emitting element having an N type semiconductor layer, a light emitting layer, a P type semiconductor layer, and a P type electrode formed on a translucent substrate in this order, and mounted at the substrate side, wherein said p type electrode covers substantially an entire area of said P type semiconductor layer, said P type electrode has a reflectance of 55 to 100%, light is emitted outward from a side plane, and said semiconductor light emitting element comprising said translucent substrate, said P type semiconductor layer and said N type semiconductor layer, has a total thickness in a range of 60 to 460 μm.
2. The semiconductor light emitting element according to claim 1 , wherein said P type electrode is formed of a single layer or a multilayer selected from the group consisting of Pd (palladium), Ni (nickel), Pt (platinum), Au (gold), and Ag (silver), or an alloy thereof.
3. The semiconductor light emitting element according to claim 1 , wherein said semiconductor light emitting element has a reflectance of at least 70% at a backside of said translucent substrate.
4. The semiconductor light emitting element according to claim 3 , wherein said semiconductor light emitting element has a reflective layer formed at the backside of said substrate.
5. The semiconductor light emitting element according to claim 4 , wherein said reflective layer is formed of a single layer or a multilayer selected from the group consisting of Ti (titanium), Al (aluminum), In (indium), W (tungsten), and Hf (hafnium), or an alloy thereof.
6. The semiconductor light emitting element according to claim 4 , wherein said reflective layer is an N type electrode.
7. The semiconductor light emitting element according to claim 1 , wherein said semiconductor light emitting element has an N type electrode formed at a same side as said P type electrode, and said N type electrode has a reflectance of 5 to 100%.
8. A semiconductor light emitting device having the semiconductor light emitting element defined in claim 1 placed on a mount using silver paste.