High power semiconductor laser diode and method for making such a diode
View Patent ↗Semiconductor laser diodes, particularly high power ridge waveguide laser diodes, are often used in opto-electronics as so-called pump laser diodes for fiber amplifiers in optical communication lines. To provide the desired high power output and stability of such a laser diode and avoid degradation during use, the present invention concerns an improved design of such a device, the improvement in particular consisting in a way of suppressing the undesired first and higher order modes of the laser which consume energy and do not contribute to the optical output of the laser, thus reducing it's efficiency. Essentially, the novel effect is provided by a structure comprising CIG—for Complex Index Guiding—elements on top of the laser diode. These CIG elements consist of one or a plurality of layers and must contain at least one layer which provides the optical absorption of undesired modes of the lasing wavelength and preferably contains an insulating layer as a first contact layer to the semiconductor. The CIG elements may be specifically shaped, both in thickness and coverage of the laser's semiconductor body, to provide desired suppression characteristics. Further, the CIG elements may be combined with the contact layer usually providing the electrical input power to the laser diode.
1. A laser diode with a semiconductor body having an active region, a lower cladding layer, an upper cladding layer with a ridge waveguide, and a top metallization for current injection, said laser diode further including an optically absorbing element for suppressing first and higher order modes of said laser diode, said absorbing element being part of one or more complex index guiding (CIG) elements, said CIG elements comprising:
an absorption layer and an insulation layer, said insulation layer being provided on at least part of said upper cladding layer separating at least part of said absorption layer from said laser semiconductor body, said insulation layer having a predetermined thickness with a maximum close to said ridge waveguide and a minimum distant from said ridge waveguide, whereby a location and an amount of absorption depend on said predetermined thickness of said insulation layer.
2. The laser diode according to claim 1 , wherein two CIG elements are provided and arranged symmetrically on both sides of the ridge waveguide.
3. The laser diode according to claim 1 , wherein the insulation layer separating the absorption layer from the semiconductor body exhibits two sections each of essentially constant thickness, a first, greater thickness close to the ridge waveguide and a second, smaller thickness distant from the ridge waveguide.
4. The laser diode according to claim 1 , wherein the CIG element comprises a plurality or stack of insulating and absorbing layers.
5. The laser diode according to claim 1 , wherein at least two CIG elements are provided as layer structures preferably located on both sides of the ridge waveguide and extending along the whole length of the semiconductor body.
6. The laser diode according to claim 1 , wherein at least two CIG elements are provided as layer structures preferably located on both sides of the ridge waveguide and extending only partially along the length of the semiconductor body.
7. The laser diode according to claim 1 , wherein the CIG element is shaped to maximize suppression of first and higher or-der modes while minimizing absorption of the fundamental mode.
8. The laser diode according to claim 3 , wherein the thickness of the insulator between the semiconductor body and the absorbing layer is being selected to minimize absorption of the fundamental mode while maximizing suppression of first and higher order modes.
9. The laser diode according to claim 3 , wherein the thickness of the absorption layer is being selected to maximize suppression of first and higher order modes while minimizing absorption of the fundamental mode.
10. The laser diode according to claim 3 , wherein the material of the absorption layer is being selected to maximize suppression of first and higher order modes while minimizing absorption of the fundamental mode.
11. The laser diode according to claim 4 , wherein materials and thickness for the CIG element are being selected to maximize suppression of first and higher order modes while minimizing absorption of the fundamental mode.
12. The laser diode according to claim 1 , wherein the absorption layer of the CIG element covers a large part of the semi-conductor body, preferably the whole surface of said body.
13. The laser diode according to claim 12 , wherein the absorbing layer of the complex index guiding element further serves as a contact layer for said laser's ridge waveguide.
14. The laser diode according to claim 1 , wherein the semiconductor body is of at least one of GaAs and InP based materials and the complex index guiding element comprises a conductor or a semiconductor including at least one of Ti, Cr, Pt, Au, and Si.
15. The laser diode according to claim 1 , wherein the semiconductor body is of at least one of GaAs and InP based materials and the complex index guiding element comprises an insulator, including at least one of TiO2, Si3N4, AlN, and SiO2.
16. The laser diode according to claim 3 , wherein the two sections of the absorption layer abut against a common shoulder which is self-aligned with the ridge waveguide.
17. The laser diode according to claim 1 , wherein the insulation layer separates the absorption layer from the laser semiconductor body in the vicinity of the ridge waveguide only and with an essentially constant thickness.