IP Library Granted Patent US 7,018,580
Granted Patent B2
US 7,018,580 · App. 10/248,095 · Granted Mar 28, 2006

Method and apparatus for forming tapered waveguide structures

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Quick Facts
Patent No.
US 7,018,580
App. No.
10/248,095
Granted
Mar 28, 2006
Kind
B2
Abstract

A method of fabricating a stamping mold suitable for use in the formation of a tapered waveguide structure includes defining a stamping pattern upon the surface of a silicon wafer, and removing portions of the silicon wafer surface in accordance with the stamped pattern, thereby creating tapered vertical surfaces within the wafer.

Claims (16)

1. A method of fabricating a stamping mold suitable for use in the formation of a tapered waveguide structure, the method comprising:

defining a stamping pattern upon the surface of a silicon wafer; and

removing portions of said silicon wafer surface by crystallographic etching thereof in accordance with said stamping pattern, thereby creating tapered vertical surfaces within said wafer, wherein said silicon wafer is initially formed at an off-axis angle with respect to a <100> crystal orientation.

2. The method of claim 1 , wherein said off-axis angle is about 9 degrees.

3. The method of claim 2 , further comprising sectioning said silicon wafer into individual molds, each of said molds having a single tapered surface.

4. A method of fabricating a stamping mold suitable for use in the formation of a tapered waveguide structure, the method comprising:

defining a stamping pattern upon the surface of a silicon wafer; and

removing portions of said silicon wafer surface by crystallographic etching thereof in accordance with said stamping pattern, thereby creating tapered vertical surfaces within said wafer, wherein an angle of said tapered vertical surfaces with respect to a normal to said surface of said silicon wafer is approximately 45 degrees, wherein said silicon wafer is initially formed at an off-axis angle with respect to a desired crystal orientation.

5. The method of claim 4 , wherein said off-axis angle is selected to provide said angle of said tapered vertical surfaces with respect to said normal to said surface of said silicon wafer equal to approximately 45 degrees.

6. The method of claim 5 , wherein said off-axis angle is approximately 9 degrees.

7. A method of fabricating a stamping mold suitable for use in the formation of a tapered waveguide structure, the method comprising:

defining a stamping pattern upon the surface of a silicon wafer; and

removing portions of said silicon wafer surface by crystallographic etching thereof in accordance with said stamping pattern, thereby creating tapered vertical surfaces within said wafer, wherein an angle of said tapered vertical surfaces with respect to a normal to said surface of said silicon wafer is approximately 45 degrees.

8. The method of claim 7 , wherein said silicon wafer is initially formed at an off-axis angle with respect to a desired crystal orientation.

9. The method of claim 8 , wherein said off-axis angle is approximately 9 degrees.

10. The method of claim 8 , wherein said silicon wafer is initially formed at an off-axis angle with respect to a <100> crystal orientation.

Assignments (4)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE THE APPLICATION NUMBER 15039474 PREVIOUSLY RECORDED AT REEL: 054528 FRAME: 0467. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Mar 23, 2021
From: SABIC GLOBAL TECHNOLOGIES B.V.
To: SHPP GLOBAL TECHNOLOGIES B.V.
Reel/Frame 057453/0680 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 26, 2020
From: SABIC GLOBAL TECHNOLOGIES B.V.
To: SHPP GLOBAL TECHNOLOGIES B.V.
Reel/Frame 054528/0467 →
RELEASE OF SECURITY INTEREST Recorded Mar 17, 2014
From: CITIBANK, N.A.
To: SABIC INNOVATIVE PLASTICS IP B.V.
Reel/Frame 032459/0798 →
SECURITY AGREEMENT Recorded Aug 18, 2008
From: SABIC INNOVATIVE PLASTICS IP B.V.
To: CITIBANK, N.A., AS COLLATERAL AGENT
Reel/Frame 021423/0001 →