Chromium black light shield
View Patent ↗A black light shield for preventing incident light from being received by light receiving elements, the black shield includes a support structure; a first CrO x layer disposed over the support structure for absorbing the incident light in a substantially reflected transmission path; and a second CrO x layer disposed integral with the support structure for absorbing the incident light in a substantially non-reflected transmission path.
1. A black light shield for preventing incident light from being received by a plurality of pixels of an image sensor, the black shield comprising:
(a) a support structure;
(b) a first CrO x layer disposed spanning the support structure for absorbing the incident light in a substantially reflected transmission path; and
(c) a second CrO x layer disposed spanning the support structure for absorbing the incident light in a substantially non-reflected transmission path; wherein the plurality of pixels of the image sensor span at least a portion of the substrate in a predetermined pattern and receive the incident light.
2. The black light shield as in claim 1 further comprising:
(e) chromium metal disposed between the first CrO x and the second CrO x for blocking residual light transmitted through either the first or second CrO x .
3. The black light shield as in claim 1 , wherein the support structure is either quartz, glass or silicon substrate.
4. The black light shield as in claim 1 , wherein the first CrO x is chromium oxide.
5. The black light shield as in claim 4 , wherein the second CrO x is chromium oxide.
6. The black light shield as in claim 5 , wherein the first and second chromium oxide each having a thickness of substantially between 500 to 1000 angstroms.
7. The black light shield as in claim 1 further comprising (d) a plurality of color filters disposed in both the first and second CrO x layer for permitting a portion of the incident light to be received by the pixels.
8. A method for preventing incident light from being received by a plurality of pixels of an image sensor, the method comprising the steps of:
(a) providing a support structure;
(b) providing a first CrO x layer disposed spanning the support structure for absorbing the incident light in a substantially reflected transmission path; and
(c) providing a second CrO x layer disposed spanning the support structure for absorbing the incident light in a substantially non-reflected transmission path; wherein the plurality of pixels of the image sensor span at least a portion of the substrate in a predetermined pattern and receive the incident light.
9. The method as in claim 8 further comprising the step of (e) providing chromium metal disposed between the first CrO x and the second CrO x for blocking residual light transmitted through either the first or second CrO x .
10. The method as in claim 8 further comprising the step of providing the support structure as either quartz, glass or silicon substrate.
11. The method as in claim 8 further comprising the step of providing the first CrO x as chromium oxide.
12. The method as in claim 11 further comprising the step of providing the second CrO x as chromium oxide.
13. The method as in claim 12 further comprising the step of providing the first and second chromium oxide each having a thickness of substantially between 500 to 1000 angstroms.
14. The method as in claim 8 further comprising (d) providing a plurality of color filters disposed in both the first and second CrO x layer for permitting a portion of the incident light to be received by the pixels.