Method of junction formation for CIGS photovoltaic devices
View Patent ↗Sulfur is used to improve the performance of CIGS devices prepared by the evaporation of a single source ZIS type compound to form a buffer layer on the CIGS. The sulfur may be evaporated, or contained in the ZIS type material, or both. Vacuum evaporation apparatus of many types useful in the practice of the invention are known in the art. Other methods of delivery, such as sputtering, or application of a thiourea solution, may be substituted for evaporation.
1. A thin film photovoltaic device comprising:
a) a substrate;
b) a first conductor thin film layer
c) a chalcopyrite semiconductor thin film layer;
d) a buffer layer consisting essentially of a defect chalcopyrite semiconductor with included sulfur; and
e) a transparent conductor layer
wherein the defect chalcopyrite semiconductor is formed primarily of Group II, III, and VI elements.
2. A device of claim 1 in which the chalcopyrite semiconductor is copper (indium, gallium) selenide.
3. A device of claim 1 in which the buffer layer consists essentially of ZnIn 2 (Se 1-x , S x ) 4 , where x is less than approximately 0.6.
4. A device of claim 1 in which the transparent conductor layer consists essentially of a resistive layer of a metal oxide and a superimposed conductive layer of a doped metal oxide.
5. A device of claim 1 in which the buffer layer is from 4 nm to 30 nm thick.
6. A device of claim 1 in which the first conductor layer comprises Mo.
7. A photovoltaic device consisting essentially of:
a) a substrate;
b) a thin film layer of Mo;
c) a thin film layer of copper (indium, gallium) selenide;
d) a buffer layer consisting essentially of zinc indium selenide, deposited in conjunction with provision of sulfur; and
e) at least one additional layer, comprising a doped transparent conductor.
8. A photovoltaic module comprising a plurality of monolithically connected devices of claim 1 .
9. A photovoltaic module comprising a plurality of monolithically connected devices of claim 7 .
10. A method for the production of a thin film photovoltaic device, comprising depositing the following thin film layers on a substrate in a vacuum deposition apparatus:
a) a conductor layer;
b) a copper (indium, gallium) selenide layer;
c) a buffer layer; and
d) a transparent conductor layer,
wherein the buffer layer consists essentially of ZnIn x Se y S z , and wherein x, y, and z are nonzero.
11. A method of claim 10 in which the ZnIn x Se y S z is deposited from a vapor phase.
12. A method of claim 11 in which the ZnIn x Se y S z is deposited by vacuum evaporation during which the ZnIn x Se y S z is maintained at a vacuum evaporation temperature.
13. A method of claim 12 in which the evaporation utilizes source materials consisting essentially of p grams of ZnIn x Se y S z and q grams of sulfur, where q=np and n is less than 4.
14. A method of claim 13 in which n is from 0.3 to 2.
15. A method of claim 13 in which the ZnIn x Se y S z source material is preheated to a pretreatment temperature significantly less than the vacuum evaporation temperature, for a time sufficient to drive off superficial selenium.
16. A method of claim 15 in which the pretreatment temperature is from 250° C. to 600° C.
17. A method of claim 13 in which the evaporation source materials are loaded as a single source and held at progressively higher temperatures such that at least a portion of the sulfur is evaporated prior to evaporation of the ZnIn x Se y .
18. A method of claim 13 in which S and ZnIn x Se y source materials are loaded as separate sources and heated such that a predominant portion of the S is evaporated prior to evaporation of the ZnIn x Se y .
19. A method of claim 11 in which the vapor flux is restricted to approximate at least one point source.
20. A method of claim 11 in which the vapor flux is restricted to approximate a line source.
21. A method of claim 11 in which the ZnIn x Se y S z is deposited by sputtering from a target.
22. A method of claim 21 in which the target is a compound target.
23. A method of claim 21 in which the target is a Zn,In combination.
24. A method of claim 23 in which sulfur is supplied from a gaseous source.
25. A method of claim 24 in which the gaseous source is H 2 S.
26. A method of claim 11 in which the deposition source material is prepared by alloying the Zn and In to form an alloy and then reacting the alloy with Se.
27. A method of claim 11 in which the deposition source material is prepared by simultaneously reacting the Zn, In, and Se.
28. A method of claim 10 in which the substrate is maintained at from 100 to 350° C. during at least a portion of the buffer layer deposition.
29. A method of claim 10 in which the vacuum deposition apparatus is maintained under vacuum between deposition of the copper (indium, gallium) selenide layer and the buffer layer.
30. A method of claim 10 in which deposition of the buffer layer is performed after breaking of the vacuum.
31. A method of claim 10 in which the buffer layer consists of a plurality of sublayers.
32. A method for the production of a thin film photovoltaic device, comprising depositing the following thin film layers on a substrate in a vacuum deposition apparatus:
a) a conductor layer;
b) a copper (indium, gallium) selenide layer;
c) a buffer layer deposited in conjunction with provision of sulfur; and
d) a transparent conductor layer,
wherein the buffer layer consists essentially of ZnIn x Se y S z , and wherein x and y are nonzero.