Semiconductor light-emitting device and method for manufacturing thereof
View Patent ↗In a semiconductor light-emitting device, on an n-GaAs substrate are stacked an n-GaAs buffer layer, an n-cladding layer, an undoped active layer, a p-cladding layer, a p-intermediate band gap layer and a p-current diffusion layer. Further, a first electrode is formed under the n-GaAs substrate, and a second electrode is formed on the grown-layer side. In this process, a region of the p-intermediate band gap layer just under the second electrode is removed, the p-current diffusion layer is stacked in the removal region on the p-cladding layer, and a junction plane of the p-current diffusion layer and the p-cladding layer becomes high in resistance due to an energy band structure of type II. This semiconductor light-emitting device is capable of reducing ineffective currents with a simple construction and taking out light effectively to outside, thus enhancing the emission intensity.
1. A method for manufacturing a semiconductor light-emitting device, comprising the steps of:
stacking, one by one on one side of a surface of a first-conductive-type semiconductor substrate, a first-conductive-type first cladding layer, a first-conductive-type or second-conductive-type or an undoped active layer, a second-conductive-type second cladding layer, a second-conductive-type intermediate band gap layer and a second-conductive-type protective layer; removing a device center region of the second-conductive-type protective layer and a device center region of the second-conductive-type intermediate band gap layer, respectively, by etching;
after the removal step of the second-conductive-type protective layer and intermediate band gap layer, stacking a current diffusion layer on the second-conductive-type protective layer arid the second-conductive-type second cladding layer to form, in the second-conductive-type current diffusion layer and the second-conductive-type second cladding layer, an energy band structure in which an upper-end position of valence band and a lower-end position of conduction band are in a type II relation;
forming a first electrode overall on the other side of the surface of the first-conductive-type semiconductor substrate; and
forming a second electrode over the device center region on the second-conductive-type current diffusion layer.
2. A method for manufacturing a semiconductor light-emitting device, comprising the steps of:
stacking, one by one on one side of a surface of a first-conductive-type semiconductor substrate, a first-conductive-type first cladding layer, a first-conductive-type or second-conductive-type or an undoped active layer, a second-conductive-type second cladding layer, a second-conductive-type intermediate band gap layer and a second-conductive-type protective layer;
removing a device center region of the second-conductive-type protective layer and a device center region of the second-conductive-type intermediate band gap layer, respectively, by etching, and further removing an upper-side portion of a region of the second-conductive-type second cladding layer corresponding to the removal region by etching;
after the removal step of the second-conductive-type protective layer, intermediate band gap layer and second cladding layer, stacking a second-conductive-type current diffusion layer on the second-conductive-type protective layer and the second-conductive-type second cladding layer to form, in the second-conductive-type current diffusion layer and the second-conductive-type second cladding layer, an energy band structure in which an upper-end position of valence band and a lower-end position of conduction band are in a type II relation;
forming a first electrode overall on the ether side of the surface of the first-conductive-type semiconductor substrate; and
forming a second electrode over the device center region on the second-conductive-type current diffusion layer.
3. A method for manufacturing a semiconductor light-emitting device, comprising the steps of:
stacking, one by one on one side of a surface of a first-conductive-type semiconductor substrate, a first-conductive-type first cladding layer, a first-conductive-type or second-conductive-type or an undoped active layer, a second-conductive-type second cladding layer, a second-conductive-type etching stop layer, a second-conductive type third cladding layer, a second-conductive-type intermediate band gap layer and a second-conductive-type protective layer;
removing device center regions of the second-conductive-type protective layer, the second-conductive-type intermediate band gap layer and the second-conductive-type third cladding layer by etching;
after the removal step of the second-conductive-type protective layer, intermediate band gap layer and third cladding layer, stacking a second-conductive-type current diffusion layer on the second-conductive-type protective layer and the second-conductive-type etching stop layer to form, in the second-conductive-type current diffusion layer, the second-conductive-type etching stop layer and the second-conductive-type second cladding layer, an energy band structure in which an upper-end position of valence band and a lower-end position of conduction band are in a type II relation;
forming a first electrode overall on the other side of the surface of the first-conductive-type semiconductor substrate; and
forming a second electrode over the device center region on the second-conductive-type current diffusion layer.
4. A method for manufacturing a semiconductor light-emitting device, comprising the steps of:
stacking, one by one on one side of a surface of a first-conductive-type semiconductor substrate, a first-conductive-type first cladding layer, a first-conductive-type or second-conductive-type or an undoped active layer, a second-conductive-type second cladding layer, a second-conductive-type intermediate band gap layer and a second-conductive-type protective layer;
removing regions of the second-conductive-type protective layer and the second-conductive-type intermediate band gap layer other than their device center regions, respectively, by etching;
after the removal step of the second-conductive-type protective layer and intermediate band gap layer, stacking a second-conductive-type current diffusion layer on the second-conductive-type protective layer and the second-conductive-type second cladding layer to form, in the second-conductive-type current diffusion layer and the second-conductive-type second cladding layer, an energy band structure in which an upper-end position of valence band and a lower-end position of conduction band are in a type II relation;
forming a first electrode overall on the other side of the surface of the first-conductive-type semiconductor substrate; and
forming a second electrode over the region other than the device center region on the second-conductive-type current diffusion layer.
5. A method for manufacturing a semiconductor light-emitting device, comprising the steps of:
stacking, one by one on one side of a surface of a first-conductive-type semiconductor substrate, a first-conductive-type first cladding layer, a first-conductive-type or second-conductive-type or an undoped active layer, a second-conductive-type second cladding layer, a second-conductive-type intermediate band gap layer and a second-conductive-type protective layer;
removing regions of the second-conductive-type protective layer and the second-conductive-type intermediate band gap layer other than their device center regions, respectively, by etching, and further removing an upper-side portion of a region of the second-conductive-type second cladding layer corresponding to the removal region by etching;
after the removal step of the second-conductive-type protective layer, intermediate band gap layer and second cladding layer, stacking a second-conductive-type current diffusion layer on the second-conductive-type protective layer and the second-conductive-type second cladding layer to form, in the second-conductive-type current diffusion layer and the second-conductive-type second cladding layer, an energy band structure in which an upper-end position of valence band and a lower-end position of conduction band are in a type II relation;
forming a first electrode overall on the other side of the surface of the first-conductive-type semiconductor substrate; and
forming a second electrode over the region other than the device center region on the second-conductive-type current diffusion layer.
6. A method for manufacturing a semiconductor light-emitting device, comprising the steps of:
stacking, one by one on one side of a surface of a first-conductive-type semiconductor substrate, a first-conductive-type first cladding layer, a first-conductive-type or second-conductive-type or an undoped active layer, a second-conductive-type second cladding layer, a second-conductive-type etching stop layer, a second-conductive-type third cladding layer, a second-conductive-type intermediate band gap layer and a second-conductive-type protective layer;
removing regions of the second-conductive-type protective layer, the second-conductive-type intermediate band gap layer and the second-conductive-type third cladding layer other than their device center regions, respectively, by etching;
after the removal step of the second-conductive-type protective layer, intermediate band gap layer and third cladding layer, stacking a second-conductive-type current diffusion layer on the second-conductive-type protective layer and the second-conductive-type etching stop layer to form, in the second-conductive-type current diffusion layer, the second-conductive-type etching stop layer and the second-conductive-type second cladding layer, an energy band structure in which an upper-end position of valence band and a lower-end position of conduction band are in a type II relation;
forming a first electrode overall on the other side of the surface of the first-conductive-type semiconductor substrate; and
forming a second electrode over the region other than the device center region on the second-conductive-type current diffusion layer.