IP Library Granted Patent US 6,906,899
Granted Patent B2
US 6,906,899 · App. 10/255,867 · Granted Jun 14, 2005

GMR sensor with end portion magnetization of pinned layer modified to reduce side reading effects

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Quick Facts
Patent No.
US 6,906,899
App. No.
10/255,867
Granted
Jun 14, 2005
Kind
B2
Abstract

A magneto-resistive (MR) sensor is provided including a pinned layer, and a free layer disposed above the pinned layer. Also included is a pair of leads disposed over portions of the free layer. Further, a pinning layer is disposed below the pinned layer. Disposed below the pinning layer is an underlayer. For enhanced operation, first portions of the pinned layer disposed below the leads have a first pinned layer magnetization parallel with a free layer magnetization associated with the free layer in the absence of an external field. Further, a second portion of the pinned layer has a second pinned layer magnetization perpendicular with the free layer magnetization in the absence of the external field.

Claims (36)

1. A magneto-resistive (MR) sensor, comprising:

a pinned layer;

a free layer disposed above the pinned layer;

a pair of leads disposed over portions of the free layer; and

a pinning layer disposed below the pinned layer;

wherein first portions of the pinned layer disposed below the leads have a first pinned layer magnetization parallel with a free layer magnetization, and a second portion of the pinned layer has a second pinned layer magnetization perpendicular with the free layer magnetization in the absence of an external field;

wherein the first portions of the pinned layer do not require presence of a biasing field to maintain the first pinned layer magnetization orientation.

2. The MR sensor as recited in claim 1 , and further comprising a spacer layer disposed between the free layer and the pinned layer.

3. The MR sensor as recited in claim 1 , wherein the first portions of the pinned layer are structurally modified by prior application of ion radiation to the MR sensor.

4. The MR sensor as recited in claim 3 , wherein the MR sensor is subjected to an external magnetic field during the ion radiation.

5. The MR sensor as recited in claim 3 , wherein the MR sensor is subjected to a predetermined temperature during the ion radiation.

6. The MR sensor as recited in claim 3 , wherein the MR sensor is masked with photoresist for protecting the second portion of the pinned layer from the ion radiation.

7. The MR sensor as recited in claim 3 , wherein the MR sensor is masked with photoresist for subjecting only the first portions of the pinned layer to the ion radiation.

8. The MR sensor as recited in claim 1 , wherein the first pinned layer magnetization reduces side-reading effects.

9. The MR sensor as recited in claim 1 , wherein the first pinned layer magnetization stabilizes the MR sensor.

10. A magneto-resistive (MR) sensor fabricated

utilizing a process, comprising:

depositing a pinning layer;

depositing a pinned layer above the pinning layer;

depositing a free layer above the pinned layer with a spacer layer therebetween;

positioning a mask on the free layer;

applying an external magnetic field to the MR sensor;

applying ion radiation to portions of the MR sensor not protected by the mask for setting a first pinned layer magnetization orientation of the unprotected portions of the pinned layer such that the unprotected portions of the pinned layer do not require presence of a biasing field to maintain the first pinned layer magnetization orientation;

depositing a pair of leads above the free layer; and

removing the mask.

11. A disk drive system, comprising:

a magnetic recording disk;

a magnetic head including:

a pinned layer,

a free layer disposed above the pinned layer with a spacer layer therebetween,

a pair of leads disposed over portions of the free layer, and

a pinning layer disposed below the pinned layer,

wherein first portions of the pinned layer disposed below the leads have a first pinned layer magnetization parallel with a free layer magnetization, and a second portion of the pinned layer has a second pinned layer magnetization perpendicular with the free layer magnetization in the absence of an external field;

wherein the first portions of the pinned layer do not require presence of a biasing field to maintain the first pinned layer magnetization orientation;

an actuator for moving the magnetic head across the magnetic recording disk so the magnetic head may access different regions of the magnetic recording disk; and

a controller electrically coupled to the magnetic head.

Assignments (4)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 5, 2016
From: HGST NETHERLANDS B.V.
To: WESTERN DIGITAL TECHNOLOGIES, INC.
Reel/Frame 040820/0802 →
CHANGE OF NAME Recorded Oct 25, 2012
From: HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B.V.
To: HGST NETHERLANDS B.V.
Reel/Frame 029341/0777 →
RECORD TO CORRECT WRONG PATENT NUMBERS 6905899 ON ASSIGNMENT DOCUMENT PREVIOUSLY RECORDED ON REEL 016824 AND FRAME 0508. THE MISTAKE IS NOT DUE TO ANY ERROR BY THE APPLICANTS. Recorded Jan 30, 2006
From: INTERNATIONAL BUSINESS MACHINES CORPORATION
To: HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B.V.
Reel/Frame 017215/0518 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 26, 2002
From: MCCORD, JEFFREY G.
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 013344/0175 →