Ultrasensitive photodetector with integrated pinhole for confocal microscopes
View Patent ↗Photodetector device comprising a semiconductor substrate ( 1 ) of a first type of conductivity connected to a first electrode ( 2 ). Said substrate comprises an active area ( 4 ) made up of different semiconductor regions of a second type of conductivity ( 8, 9, 10 ) insulated from each other and connected to respective second electrodes ( 13, 14, 15 ) so that each of them can be connected separately from the others to an appropriate bias voltage. By regulating the bias voltages applied to these regions the function of optic diaphragm of the device can be controlled. The device works without needing any form of optical insulation between the different regions of the active area and always uses the same single output electrode for the signal in all the different situations of diaphragm adjustment.
1. A photodetector device comprising:
a semiconductor substrate of a first type of conductivity;
a first electrode connected to said semiconductor substrate;
a plurality of second electrodes; and
an active region of a second type of conductivity, said active region being formed on a surface of said semiconductor substrate, said active region being operable to receive an optical signal to be detected, and said active region being comprised of a plurality of semiconductor sub-regions of the second type of conductivity which are electrically insulated from each other by portions of said semiconductor substrate and which are independently connected to said plurality of second electrodes, respectively;
wherein each of said plurality of second electrodes is separated from each other, and an independently controlled selectable bias voltage is respectively applied between each of said plurality of second electrodes and said first electrode so as to be able to produce avalanche multiplication of charge carriers under the corresponding semiconductor sub-regions and a resulting electrical output signal which is indicative of the optical signal to be detected.
2. The device according to claim 1 , further comprising another semiconductor region of the first type of conductivity with a high dopant density, said another semiconductor region being provided under said active region.
3. The device according to claim 2 , wherein the width of said another semiconductor region is smaller than the width of said active region.
4. The device according to claim 1 , wherein a ring-shaped semiconductor region of the second type of conductivity with a lower dopant density than a dopant density of said semiconductor sub-regions of the second type of conductivity of said active region is provided around said active region.
5. The device according to claim 1 , wherein said semiconductor sub-regions of said active region have the shape of concentric rings.
6. The device according to claim 1 , wherein said semiconductor sub-regions of said active region have the shape of circumference sectors.