Optical frequency-converters based on group III-nitrides
View Patent ↗An apparatus includes an optical waveguide and an optical filter positioned to receive light from the optical waveguide. The optical waveguide includes a sequence of alternating first and second stripes. The sequence runs along a propagation direction in the optical waveguide. The first and second stripes are formed of different polarization states of a group III-nitride semiconductor. The optical filter removes light of a preselected frequency.
1. A light source, comprising:
a laser configured to emit a light beam having a preselected frequency; and
an optical waveguide coupled to receive the light beam and comprising a layer of a first group III-nitride semiconductor and a striped layer of a second group nitride semiconductor next to the layer of the first group III-nitride semiconductor;
wherein an intrinsic polarization of the layer of the first group III-nitride semiconductor is periodically modulated along a propagation direction in the waveguide.
2. The light source of claim 1 , wherein the layer of the first group III-nitride semiconductor comprises a sequence of alternating G-polar and N-polar GaN stripes.
3. The light source of claim 1 , wherein the intrinsic polarization's modulation period is P; and
wherein |P−2L c, h |<|P−2L c, h bulk |, L c, h and L c, h bulk being coherence lengths for second harmonic light generated by light of the preselected frequency in the waveguide and in a bulk sample of the first group III-nitride semiconductor, respectively.
4. The light source of claim 1 , wherein twice the selected frequency is a frequency for ultraviolet light.
5. The light source of claim 1 , further comprising:
a second laser configured to emit light at another preselected frequency; and
wherein the intrinsic polarization's modulation period is P; and
wherein |P−2L c |<|P−2L c bulk |, L c and L c bulk being the coherence lengths for parametric light that is generated by light of the two preselected frequencies in the waveguide and in a bulk sample of the first group III-nitride semiconductor, respectively.
6. The light source of claim 2 , wherein the sequence includes at least 1,000 of the stripes.
7. The light source of claim 2 ,
wherein the striped layer of a second group III-nitride semiconductor is disposed between a crystalline substrate and the G-polar stripes.
8. The light source of claim 7 , wherein the waveguide has an optical core layer and the striped layer of the second group III-nitride is five or more times thicker than the optical core layer.
9. An apparatus, comprising:
an optical waveguide; and
an optical filter positioned to receive light from the optical waveguide and configured to filter out light of a preselected frequency; and
wherein the optical waveguide comprises a striped layer and a layer formed of a sequence of alternating first and second stripes, the stripes comprising a first group III-nitride semiconductor, the striped layer comprising a second group III-nitride semiconductor and being next to the other layer, the sequence running along a propagation direction in the optical waveguide, the first and second stripes comprising the first group III-nitride semiconductor in opposite polarization states.
10. The apparatus of claim 9 , wherein the first and second stripes are respectively G-polar GaN and N-polar GaN.
11. The apparatus of claim 9 , wherein the first and second stripes have the same width.
12. The apparatus of claim 9 , wherein the sequence includes at least 1,000 of the stripes.
13. The apparatus of claim 9 ,
wherein the striped layer comprises the second group III-nitride semiconductor is disposed between a crystalline substrate and the first stripes.
14. The apparatus of claim 13 , wherein the waveguide has an optical core layer and the layer comprising the second group III-nitride is five or more times thicker than the optical core layer.
15. The apparatus of claim 9 , further comprising a laser configured to transmit light of the preselected frequency to the waveguide.
16. The apparatus of claim 15 , wherein the sequence of first and second stripes produces a polarization modulation with period P; and
wherein |P−2L c, h |<|P−2L c, h bulk |, L c, h and L c, h bulk being coherence lengths for second harmonic light that is generated by light of the preselected frequency in the stripes and in a bulk sample of the first group-III nitride semiconductor semiconductor, respectively.
17. A method of fabricating a nonlinear optical source, comprising:
providing an optical second harmonic generator having an optical waveguide with a nonlinear optical medium whose intrinsic polarization has a periodic modulation, the waveguide comprising a layer of a first group III-nitride semiconductor and a striped layer of a second group III-nitride semiconductor next to the layer of the first group III-nitride semiconductor; and
coupling a laser that transmits light of a preselected frequency to the waveguide, the preselected frequency capable of generating second harmonic light with a bulk coherence length in a homogenous bulk sample of the nonlinear optical medium, the period of the intrinsic polarization modulation being different from an even integer times the bulk coherence length.
18. The method of claim 17 , further comprising coupling a filter that attenuates the preselected frequency to an output of the waveguide.
19. The method of claim 17 , wherein the medium is gallium nitride.