IP Library › Granted Patent US 6,900,284
Granted Patent B2
US 6,900,284 · App. 10/261,034 · Granted May 31, 2005

POLY-O-HYDROXYAMIDES, POLYBENZOXAZOLES, PROCESSES FOR PRODUCING POLY-O-HYDROXYAMIDES, PROCESSES FOR PRODUCING POLYBENZOXAZOLES, DIELECTRICS INCLUDING A POLYBENZOXAZOLE, ELECTRONIC COMPONENTS INCLUDING THE DIELECTRICS, AND PROCESSES FOR MANUFACTURING THE ELECTRONIC COMPONENTS

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Quick Facts
Patent No.
US 6,900,284
App. No.
10/261,034
Granted
May 31, 2005
Kind
B2
Abstract

Poly-o-hydroxyamides are cyclicized to obtain polybenzoxazoles. The poly-o-hydroxyamides provide effective filling of trenches. In particular, the poly-o-hydroxyamides can fill trenches having a width of less than 100 nm and an aspect ratio of more than 4. Further, the polybenzoxazoles of the invention are very suitable for the damascene process. A dielectric can be made from the polybenzoxazole. In turn, semiconductor devices can include the dieletric. Processes for making the poly-o-hydroxyamides, polybenzoxazoles, and semiconductor devices are included.

Claims (21)

1. A polybenzoxazole, comprising a Formula II:

where

Q′ is

Z′ is

A′ is

X′ is

R 1 is a substituent selected from the group consisting of

R 2 is a substituent selected from the group consisting of a hydrogen atom, a trifluoromethyl group, an alkyl group having from 1 to 10 carbon atoms,

R 3 is a substituent selected from the group consisting of an alkyl group having from 1 to 10 carbon atoms and an aryl group having from 5 to 22 carbon atoms;

R 4 is a divalent substituent selected from the group consisting of

Y 1 and Y 2 each independently of one another are a radical selected from the group consisting of

where if R 4 is —CH 2 —, then x is an integer from 0 to 10; and

n is a number between 1 and 100;

m is a number between 1 and 100;

p is a number between 0 and 50;

x is a number between 1 and 10;

y is a number between 1 and 10; and

w is a number between 0 and 10, provided that Q′ and Z′ are not identical.

2. The polybenzoxazole according to claim 1 , where R 1 is a trifluoromethyl radical.

3. An electronic component, comprising a dielectric including a polybenzoxazole according to claim 1 .

4. A dielectric for an electronic component, comprising a polybenzoxzaole according to claim 1 .