X-ray flat panel detector
View Patent ↗An X-ray flat panel detector includes an X-ray photosensitive film which generates signal charges upon being exposed to incident X-rays, pixel electrodes which are arrayed in contact with the X-ray photosensitive film, a bias voltage application unit which applies a bias voltage to the X-ray photosensitive film so as to make the pixel electrodes collect holes or electrons, which serve as the signal charges generated by the X-ray photosensitive film and have a higher mobility, capacitors which are arranged in correspondence with the pixel electrodes and store the charges generated by the X-ray photosensitive film, switching thin-film transistors which are arranged in correspondence with the pixel electrodes and read the charges in the capacitors, scanning lines which supply a control signal to OPEN/CLOSE-control the switching thin-film transistors, and signal lines which are connected to the switching thin-film transistors to read the charges when the switching thin-film transistors are opened.
1. An X-ray flat panel detector comprising:
an X-ray photosensitive film which generates signal charges upon being exposed to incident X-rays;
a plurality of pixel electrodes which are two-dimensionally arrayed in contact with said X-ray photosensitive film;
a bias voltage application unit which applies a bias voltage to said X-ray photosensitive film so as to make said plurality of pixel electrodes collect holes or electrons, which serve as the signal charges generated by said X-ray photosensitive film and have a higher mobility;
a plurality of capacitors which are arranged in correspondence with said pixel electrodes and store the charges generated by said X-ray photosensitive film;
a plurality of switching thin-film transistors which are arranged in correspondence with said pixel electrodes and read the charges stored in said capacitors;
a plurality of scanning lines which supply a control signal to OPEN/CLOSE-control said plurality of switching thin-film transistors; and
a plurality of signal lines which are connected to said plurality of switching thin-film transistors to read the charges when said switching thin-film transistors are opened.
2. A detector according to claim 1 , wherein each of said plurality of switching thin-film transistors has an LDD structure.
3. A detector according to claim 1 , wherein said plurality of switching thin-film transistors use, as carriers, the holes or electrons, which serve as the signal charges generated by said X-ray photosensitive film and have a higher mobility.
4. A detector according to claim 3 , wherein
said X-ray photosensitive film is substantially made of a material having a hole mobility higher than an electron mobility, and
each of said plurality of switching thin-film transistors comprises a p-channel thin-film transistor made of single-crystal silicon or polysilicon.
5. A detector according to claim 4 , wherein
said X-ray photosensitive film has an nip structure, and comprises
said pixel electrodes formed on a p side, and
a common electrode serving as an anode formed on an n side.
6. A detector according to claim 3 , wherein
said X-ray photosensitive film is substantially made of a material having an electron mobility higher than a hole mobility, and
each of said plurality of switching thin-film transistors comprises a n-channel thin-film transistor made of single-crystal silicon or polysilicon.
7. A detector according to claim 6 , wherein
said X-ray photosensitive film has an pin structure, and comprises
said pixel electrodes formed on an n side, and
a common electrode serving as a cathode formed on a p side.
8. A detector according to claim 1 , wherein said X-ray photosensitive film is substantially made of an amorphous semiconductor, a polycrystalline semiconductor, a single-crystal semiconductor, and a mixed-crystal semiconductor each of which is substantially made of one material selected from the group consisting of Se, PbI 2 , PbTe, HgTe, HgI 2 , ZnS, ZnTe, GaP, AlSb, CdZnTe, CdTe, CdSe, and CdS.
9. An X-ray flat panel detector comprising:
an X-ray photosensitive film which generates signal charges upon being exposed to incident X-rays;
a plurality of pixel electrodes which are two-dimensionally arrayed in contact with said X-ray photosensitive film;
a bias voltage application unit which applies a bias voltage to said X-ray photosensitive film so as to make said plurality of pixel electrodes collect holes or electrons, which serve as the signal charges generated by said X-ray photosensitive film and have a higher mobility;
a plurality of capacitors which are arranged in correspondence with said pixel electrodes and store the charges generated by said X-ray photosensitive film;
a plurality of switching thin-film transistors which are arranged in correspondence with said pixel electrodes and read the charges stored in said capacitors by using, as carriers, the holes or electrons, which serve as the signal charges generated by said X-ray photosensitive film and have a higher mobility;
a plurality of scanning lines which supply a control signal to OPEN/CLOSE-control said plurality of switching thin-film transistors; and
a plurality of signal lines which are connected to said plurality of switching thin-film transistors to read the charges when said switching thin-film transistors are opened.
10. A detector according to claim 9 , wherein each of said plurality of switching thin-film transistors has an LDD structure.
11. A detector according to claim 9 , wherein
said X-ray photosensitive film is substantially made of a material having a hole mobility higher than an electron mobility, and
each of said plurality of switching thin-film transistors comprises a p-channel thin-film transistor made of single-crystal silicon or polysilicon.
12. A detector according to claim 11 , wherein
said X-ray photosensitive film has an nip structure, and comprises
said pixel electrodes formed on a p side, and
a common electrode serving as an anode formed on an n side.
13. A detector according to claim 9 , wherein
said X-ray photosensitive film is substantially made of a material having an electron mobility higher than a hole mobility, and
each of said plurality of switching thin-film transistors comprises a n-channel thin-film transistor made of single-crystal silicon or polysilicon.
14. A detector according to claim 13 , wherein
said X-ray photosensitive film has an nip structure, and comprises
said pixel electrodes formed on an n side, and
a common electrode serving as a cathode formed on a p side.
15. A detector according to claim 9 , wherein said X-ray photosensitive film is substantially made of an amorphous semiconductor, a polycrystalline semiconductor, a single-crystal semiconductor, and a mixed-crystal semiconductor each of which is substantially made of one material selected from the group consisting of Se, PbI 2 , PbTe, HgTe, HgI 2 , ZnS, ZnTe, GaP, AlSb, CdZnTe, CdTe, CdSe, and CdS.
16. An X-ray flat panel detector comprising:
an X-ray photosensitive film which is substantially made of a material having a hole mobility higher than an electron mobility and generates signal charges upon being exposed to incident X-rays;
a plurality of pixel electrodes which are two-dimensionally arrayed in contact with said X-ray photosensitive film;
a bias voltage application unit which applies a bias voltage to said X-ray photosensitive film so as to make said plurality of pixel electrodes collect holes;
a plurality of capacitors which are arranged in correspondence with said pixel electrodes and store the charges generated by said X-ray photosensitive film;
a plurality of p-channel thin-film transistors which are arranged on an insulating substrate in correspondence with said pixel electrodes, have a polysilicon film formed into an island shape on the insulating substrate, and read the signal charges stored in said capacitors;
a plurality of scanning lines which supply a control signal to OPEN/CLOSE-control said plurality of p-channel thin-film transistors; and
a plurality of signal lines which are connected to said plurality of p-channel thin-film transistors to read the signal charges when said p-channel thin-film transistors are opened.
17. A detector according to claim 16 , wherein each of said plurality of p-channel thin-film transistors has an LDD structure.
18. A detector according to claim 16 , wherein said X-ray photosensitive film is substantially made of an amorphous semiconductor, a polycrystalline semiconductor, a single-crystal semiconductor, and a mixed-crystal semiconductor each of which is substantially made of one material selected from the group consisting of Se, AlSb, and GaP.
19. A detector according to claim 16 , further comprising a plurality of driving circuits which are formed on the island-shaped polysilicon film formed in a peripheral region of an image sensing region where said X-ray photosensitive film, said p-channel thin-film transistors, and said storage capacitor portions are arranged, and drive said plurality of p-channel thin-film transistors.
20. A detector according to claim 19 , wherein
said X-ray photosensitive film has an pin structure, and comprises
said pixel electrodes formed on an side, and
a common electrode serving as an anode formed on an p side.
21. An X-ray flat panel detector comprising:
an X-ray photosensitive film which is substantially made of a material having a higher electron mobility than a hole mobility and generates electrons and holes upon being exposed to incident X-rays;
a plurality of pixel electrodes which are two-dimensionally arrayed in contact with said X-ray photosensitive film;
a plurality of capacitors which are arranged in correspondence with said pixel electrodes and store the electrons generated by said X-ray photosensitive film;
a plurality of n-channel thin-film transistors which are arranged in correspondence with said pixel electrodes and read the electrons stored in said capacitors;
a plurality of scanning lines which supply a control signal to OPEN/CLOSE-control said plurality of n-channel thin-film transistors; and
a plurality of signal lines which are connected to said plurality of n-channel thin-film transistors to read the electrons when said n-channel thin-film transistors are opened.
22. A detector according to claim 21 , wherein each of said plurality of n-channel thin-film transistors has an LDD structure.
23. A detector according to claim 21 , wherein said X-ray photosensitive film is substantially made of an amorphous semiconductor, a polycrystalline semiconductor, a single-crystal semiconductor, and a mixed-crystal semiconductor each of which is substantially made of one material selected from the group consisting of PbI 2 , CdSe, ZnS, ZnTe, CdZnTe, and HgI 2 .
24. An X-ray flat panel detector comprising:
an X-ray photosensitive film which generates signal charges upon being exposed to incident X-rays;
a plurality of pixel electrodes which are two-dimensionally arrayed in contact with said X-ray photosensitive film;
a bias voltage application unit which applies a bias voltage to said X-ray photosensitive film;
a plurality of capacitors which are arranged in correspondence with said pixel electrodes and store the charges generated by said X-ray photosensitive film;
a plurality of switching thin-film transistors which comprises a p-channel thin-film transistor made of polysilicon and are arranged in correspondence with said pixel electrodes and read the charges stored in said capacitors;
a plurality of scanning lines which supply a control signal to OPEN/CLOSE-control said plurality of switching thin-film transistors; and
a plurality of signal lines which are connected to said plurality of switching thin-film transistors to read the charges when said switching thin-film transistors are opened.
25. A detector according to claim 24 , wherein each of said plurality of switching thin-film transistors has an LDD structure.
26. A detector according to claim 24 , wherein said X-ray photosensitive film is substantially made of an amorphous semiconductor, a polycrystalline semiconductor, a single-crystal semiconductor, and a mixed-crystal semiconductor each of which is substantially made of one material selected from the group consisting of PbI 2 , CdSe, ZnS, ZnTe, CdZnTe, and HgI 2 .
27. A detector according to claim 24 , wherein said plurality of switching thin-film transistors use, as carriers, the holes which serve as the signal charges generated by said X-ray photosensitive film and have a higher mobility.
28. A detector according to claim 24 , wherein said X-ray photosensitive film has one material selected from the group consisting of Se, AlSb, and GaP.
29. A detector according to claim 24 , wherein said plurality of switching thin-film transistors use, as carriers, the holes which serve as the signal charges generated by the X-ray photosensitive film.