Transflective liquid crystal display device and fabricating method thereof

1. An array substrate for a transflective liquid crystal display device, comprising:

a transflective liquid crystal display substrate;

a data line and a gate line on the substrate, the data line and the gate line defining a pixel region;

a thin film transistor connected to the data line and the gate line, the thin film transistor including source and drain electrodes, an ohmic contact layer on the source and drain electrodes, an active layer partially disposed on the ohmic contact layer and a gate electrode over the active layer, wherein the ohmic contact layer is disposed over the entire top surface of the source and drain electrodes, wherein the source electrode, drain electrode, and active layer are in contact with the substrate, and wherein the source electrode and the drain electrode include metal;

a reflective plate at the pixel region, the reflective plate having a transmissive hole; and

a pixel electrode over the reflective plate, the pixel electrode being connected to the drain electrode.

2. The substrate according to claim 1 , further comprising a first insulating layer between the active layer and the gate electrode.

3. The substrate according to claim 2 , further comprising a second insulating layer covering the thin film transistor, wherein the reflective plate is formed on the second insulating layer.

4. The substrate according to claim 3 , further comprising a third insulating layer on the reflective plate, wherein the third insulating layer has a drain contact hole and a transmissive groove through the second insulating layer, wherein the pixel electrode is formed on the third insulating layer and connected to the drain electrode through the drain contact hole.

5. An array substrate for a transflective liquid crystal display device, comprising:

a transflective liquid crystal display substrate;

a data line and a gate line on the substrate, the data line and the gate line defining a pixel region;

a thin film transistor connected to the data line and the gate line, the thin film transistor including source and drain electrodes, an ohmic contact layer on the source and drain electrodes, an active layer partially disposed on the ohmic contact layer and a gate electrode over the active layer, wherein the ohmic contact layer is disposed over the entire top surface of the source and drain electrodes, the source electrode, drain electrode, and active layer are in contact with the substrate, wherein the source electrode and the drain electrode include metal;

a reflective plate at the pixel region, the reflective plate having a transmissive hole and an unevenness;

a plurality of convex patterns under the reflective plate; and

a pixel electrode over the reflective plate, the pixel electrode being connected to the drain electrode.

6. The substrate according to claim 5 , wherein the plurality of convex patterns corresponds to the unevenness.

7. The substrate according to claim 5 , further comprising a first insulating layer between the active layer and the gate electrode.

8. The substrate according to claim 7 , further comprising a second insulating layer covering the thin film transistor, wherein the reflective plate is formed on the second insulating layer.

9. The substrate according to claim 8 , further comprising a third insulating layer on the reflective plate, wherein the third insulating layer has a drain contact hole and a transmissive groove through the second insulating layer, wherein the pixel electrode is formed on the third insulating layer and connected to the drain electrode through the drain contact hole.

10. The substrate according to claim 9 , wherein the plurality of convex patterns has the same structure as a multi-layer including the active layer, the first insulating layer and the gate electrode.