IP Library Granted Patent US 6,891,591
Granted Patent B2
US 6,891,591 · App. 10/271,747 · Granted May 10, 2005

Slant reflector with bump structure and method of fabricating the same

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Quick Facts
Patent No.
US 6,891,591
App. No.
10/271,747
Granted
May 10, 2005
Kind
B2
Abstract

A method of fabricating slant reflector with bump structure, at least comprising the steps of: providing a substrate; forming a photosensitivity material layer on the substrate; patterning the photosensitivity material layer to form m groups of pattern (m≧1, m is positive integral), and each group of pattern includes a plurality of bumps with different bottom area; and jointing the bumps to form a slant surface with bump structure. The photosensitivity material layer is either orderly or randomly patterned to form m groups of patterns. The step of patterning the photosensitivity material layer includes exposing and developing. The invention utilizes one photo-mask with particular pattern to fabricate the bump structure in a simple way.

Claims (40)

1. A method of fabricating a slant reflector with a bump structure, comprising:

providing one photomask;

providing a substrate;

forming a photosensitive material layer on the substrate;

patterning the photosensitive material layer, using the photomask, to form a plurality of bumps, each bump having, before any step of jointing the bumps, a different bottom area and a different height, wherein the larger the bottom area, the greater the height; and

jointing the bumps to form a slant surface with a bump structure, wherein only the one photomask is used to fabricate the slant reflector with the bump structure.

2. The method according to claim 1 , wherein the step of jointing the bumps comprises:

melting the bumps by baking; and

reflowing the bumps to form the slant surface with the bump structure.

3. A method of fabricating a slant reflector with a bump structure, comprising:

providing one photomask;

providing a substrate;

forming a photosensitive material layer on the substrate;

patterning the photosensitive material layer, using the photomask, to form m groups of patterns (m≧1, m is a positive integral), and each group of pattern includes a plurality of bumps, each bump having, before any step of jointing the bumps, a different bottom area and a different height, wherein the larger the bottom area, the greater the height; and

jointing the bumps to form a bump structure with a slant surface, wherein only the one photomask is used to fabricate the slant reflector with the bump structure.

4. The method according to claim 3 , wherein the bumps are arranged orderly according to the bottom area from large to small, thereby m (m≧1, m is a positive integral) groups of bump structures are formed on the slant surface after jointing, and each group of bump structure includes a plurality of contiguous bumps arranged from high to low, and from large to small.

5. The method according to claim 3 , wherein the photosensitive material layer is orderly patterned to form m groups of patterns.

6. The method according to claim 3 , wherein the photosensitive material layer is randomly patterned to form m groups of patterns.

7. The method according to claim 3 , wherein each group of pattern includes n bumps (n≧2, n is a positive integral) with different bottom areas.

8. The fabricating method according to claim 7 , wherein m groups of bump structure are formed on the slant surface after jointing, and each group includes n contiguous bumps.

9. The fabricating method according to claim 3 , wherein the step of patterning the photosensitive material layer includes exposing and developing the photosensitive material layer.

10. A method of fabricating a slant reflector with a bump structure, comprising:

providing one photomask;

providing a substrate;

forming a photosensitive material layer on the substrate;

patterning the photosensitive material layer, using the photomask, to form a plurality of bumps, each bump having, before any step of jointing the bumps, a different bottom area and a different height, wherein the larger the bottom area, the greater the height;

jointing the bumps to form a bump structure having a slant surface, wherein only the one photomask is used to fabricate the slant reflector with the bump structure; and

forming a metal film on the substrate and covering the slant surface with the bump structure.

11. The method according to claim 10 , wherein the step of patterning the photosensitive material layer includes exposing and developing the photosensitive material layer.

12. The method according to claim 10 , wherein the bumps melt by baking for jointing the bumps.

13. The method according to claim 10 , wherein the slant reflector with the bump structure is applied in a reflective liquid crystal display.

14. A method of fabricating a slant reflector with a bump structure, comprising:

providing a photomask having at least one pattern group formed thereon, the pattern group being comprised of at least three opaque bars, each bar of the pattern group having a width that is different than a width of the other bars of the pattern group, each bar being separated from an adjacent bar by a slit;

providing a substrate;

forming a photosensitive material layer on the substrate;

patterning the photosensitive material layer, using the photomask, to form a plurality of different sized bumps; and

jointing the bumps to form a slant surface with a bump structure.

15. The method according to claim 14 , wherein the bars are arranged so that a narrowest bar begins the pattern group, and a widest bar terminates the pattern group, with the bars being progressively arranged from the narrowest bar to the widest bar.

16. The method according to claim 14 , wherein only one photomask is used in fabricating the slant reflector with the bump structure.

17. The method according to claim 14 , wherein each bump has a different bottom area and a different height, and wherein the larger the bottom area, the greater the height.

Assignments (2)
CHANGE OF NAME Recorded Apr 3, 2014
From: CHIMEI INNOLUX CORPORATION
To: INNOLUX CORPORATION
Reel/Frame 032604/0487 →
MERGER Recorded May 5, 2010
From: CHI MEI OPTOELECTRONICS CORP.
To: CHIMEI INNOLUX CORPORATION
Reel/Frame 024329/0699 →